Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)

Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)

Experimental results showed that for the diamond film prepared by hot filament chemical vapor deposition (HFCVD) using Ta filament, TaC existed between diamond and the silicon substrate, and diamond grew directly on TaC, while the inherent mechanism was not clear. Here, a special coherent interface...

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Bibliographic Details
Main Authors: Shaohua Lu, Xiongtao Zhang, Yuhao Zheng, Meiyan Jiang, Chengke Chen, Xiaojun Hu
Format: Article
Language:English
Published: Taylor & Francis Group 2024-12-01
Series:Functional Diamond
Subjects:
diamond film
hfcvd
tac
diamond(111)/tac(111) interface
graphite(002)/tac(111) interface
Online Access:http://dx.doi.org/10.1080/26941112.2023.2300764
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