Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)
Experimental results showed that for the diamond film prepared by hot filament chemical vapor deposition (HFCVD) using Ta filament, TaC existed between diamond and the silicon substrate, and diamond grew directly on TaC, while the inherent mechanism was not clear. Here, a special coherent interface...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2024-12-01
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| Series: | Functional Diamond |
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| Online Access: | http://dx.doi.org/10.1080/26941112.2023.2300764 |
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| _version_ | 1849710265796395008 |
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| author | Shaohua Lu Xiongtao Zhang Yuhao Zheng Meiyan Jiang Chengke Chen Xiaojun Hu |
| author_facet | Shaohua Lu Xiongtao Zhang Yuhao Zheng Meiyan Jiang Chengke Chen Xiaojun Hu |
| author_sort | Shaohua Lu |
| collection | DOAJ |
| description | Experimental results showed that for the diamond film prepared by hot filament chemical vapor deposition (HFCVD) using Ta filament, TaC existed between diamond and the silicon substrate, and diamond grew directly on TaC, while the inherent mechanism was not clear. Here, a special coherent interface Diamond(111)//TaC(111) is observed using high resolution transmission electron microscopy, and then we explore the effects of the TaC with different lattice planes on the diamond formation by first-principle calculations. The results show that C tends to adsorb on the TaC(111) C-terminated surface. The strong covalent bond between C from diamond and Ta from TaC is formed in the Diamond(111)//TaC(111) interface, while only C–C covalent bonds are formed at the Graphite(002)/TaC(111). This makes diamond thermodynamically more stable than graphite on the TaC surfaces. Our investigations provide critical information to understand the complex diamond formation mechanism, especially with the presence of TaC. |
| format | Article |
| id | doaj-art-1e55ddb2ef894a9e94cd93da71ef934f |
| institution | DOAJ |
| issn | 2694-1120 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Functional Diamond |
| spelling | doaj-art-1e55ddb2ef894a9e94cd93da71ef934f2025-08-20T03:14:58ZengTaylor & Francis GroupFunctional Diamond2694-11202024-12-014110.1080/26941112.2023.23007642300764Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)Shaohua Lu0Xiongtao Zhang1Yuhao Zheng2Meiyan Jiang3Chengke Chen4Xiaojun Hu5College of Materials Science and Engineering, Zhejiang University of TechnologyCollege of Materials Science and Engineering, Zhejiang University of TechnologyCollege of Materials Science and Engineering, Zhejiang University of TechnologyCollege of Materials Science and Engineering, Zhejiang University of TechnologyCollege of Materials Science and Engineering, Zhejiang University of TechnologyCollege of Materials Science and Engineering, Zhejiang University of TechnologyExperimental results showed that for the diamond film prepared by hot filament chemical vapor deposition (HFCVD) using Ta filament, TaC existed between diamond and the silicon substrate, and diamond grew directly on TaC, while the inherent mechanism was not clear. Here, a special coherent interface Diamond(111)//TaC(111) is observed using high resolution transmission electron microscopy, and then we explore the effects of the TaC with different lattice planes on the diamond formation by first-principle calculations. The results show that C tends to adsorb on the TaC(111) C-terminated surface. The strong covalent bond between C from diamond and Ta from TaC is formed in the Diamond(111)//TaC(111) interface, while only C–C covalent bonds are formed at the Graphite(002)/TaC(111). This makes diamond thermodynamically more stable than graphite on the TaC surfaces. Our investigations provide critical information to understand the complex diamond formation mechanism, especially with the presence of TaC.http://dx.doi.org/10.1080/26941112.2023.2300764diamond filmhfcvdtacdiamond(111)/tac(111) interfacegraphite(002)/tac(111) interface |
| spellingShingle | Shaohua Lu Xiongtao Zhang Yuhao Zheng Meiyan Jiang Chengke Chen Xiaojun Hu Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111) Functional Diamond diamond film hfcvd tac diamond(111)/tac(111) interface graphite(002)/tac(111) interface |
| title | Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111) |
| title_full | Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111) |
| title_fullStr | Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111) |
| title_full_unstemmed | Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111) |
| title_short | Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111) |
| title_sort | preferential orientation of diamond formation on tac diamond 111 tac 111 |
| topic | diamond film hfcvd tac diamond(111)/tac(111) interface graphite(002)/tac(111) interface |
| url | http://dx.doi.org/10.1080/26941112.2023.2300764 |
| work_keys_str_mv | AT shaohualu preferentialorientationofdiamondformationontacdiamond111tac111 AT xiongtaozhang preferentialorientationofdiamondformationontacdiamond111tac111 AT yuhaozheng preferentialorientationofdiamondformationontacdiamond111tac111 AT meiyanjiang preferentialorientationofdiamondformationontacdiamond111tac111 AT chengkechen preferentialorientationofdiamondformationontacdiamond111tac111 AT xiaojunhu preferentialorientationofdiamondformationontacdiamond111tac111 |