Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer

Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer

To enhance the DC and RF performance of AlGaN/GaN HEMTs, a novel device structure was proposed and investigated through simulation. The key innovation of this new structure lies in the incorporation of an Al<sub>0.7</sub>In<sub>0.15</sub>Ga<sub>0.15</sub>N back-ba...

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Bibliographic Details
Main Authors: Shuxiang Sun, Lulu Liu, Gangchuan Qu, Xintong Xie, J. Ajayan
Format: Article
Language:English
Published: MDPI AG 2025-06-01
Series:Micromachines
Subjects:
GaN HEMT
DC and RF characteristics
back-barrier layer
locally doped barrier layer
Online Access:https://www.mdpi.com/2072-666X/16/7/779
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