Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer
To enhance the DC and RF performance of AlGaN/GaN HEMTs, a novel device structure was proposed and investigated through simulation. The key innovation of this new structure lies in the incorporation of an Al<sub>0.7</sub>In<sub>0.15</sub>Ga<sub>0.15</sub>N back-ba...
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MDPI AG
2025-06-01
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| Online Access: | https://www.mdpi.com/2072-666X/16/7/779 |
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| author | Shuxiang Sun Lulu Liu Gangchuan Qu Xintong Xie J. Ajayan |
| author_facet | Shuxiang Sun Lulu Liu Gangchuan Qu Xintong Xie J. Ajayan |
| author_sort | Shuxiang Sun |
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| description | To enhance the DC and RF performance of AlGaN/GaN HEMTs, a novel device structure was proposed and investigated through simulation. The key innovation of this new structure lies in the incorporation of an Al<sub>0.7</sub>In<sub>0.15</sub>Ga<sub>0.15</sub>N back-barrier layer and an N-type locally doped AlGaN barrier layer (BD-HEMT), based on conventional device architecture. The Al<sub>0.7</sub>In<sub>0.15</sub>Ga<sub>0.15</sub>N back-barrier layer effectively confines electrons within the channel, thereby increasing the electron concentration. Simultaneously, the N-type locally doped AlGaN barrier layer introduced beneath the gate supplies additional electrons to the channel, further enhancing the electron density. These modifications collectively lead to improved DC and RF characteristics of the device. Compared to the conventional AlGaN/GaN HEMT, BD-HEMT achieves a 24.8% increase in saturation drain current and a 10.4% improvement in maximum transconductance. Furthermore, the maximum cutoff frequency and maximum oscillation frequency are enhanced by 14.8% and 21.2%, respectively. |
| format | Article |
| id | doaj-art-1e02ee8a80854458acfdaec6372d26b6 |
| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-1e02ee8a80854458acfdaec6372d26b62025-08-20T03:58:26ZengMDPI AGMicromachines2072-666X2025-06-0116777910.3390/mi16070779Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier LayerShuxiang Sun0Lulu Liu1Gangchuan Qu2Xintong Xie3J. Ajayan4Zhumadian Key Laboratory of Novel Semiconductor Devices and Reliability, Huanghuai University, Zhumadian 463000, ChinaZhumadian Key Laboratory of Novel Semiconductor Devices and Reliability, Huanghuai University, Zhumadian 463000, ChinaZhumadian Key Laboratory of Novel Semiconductor Devices and Reliability, Huanghuai University, Zhumadian 463000, ChinaSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, ChinaDepartment of Electronics and Communication Engineering, SR University, Warangal 506371, IndiaTo enhance the DC and RF performance of AlGaN/GaN HEMTs, a novel device structure was proposed and investigated through simulation. The key innovation of this new structure lies in the incorporation of an Al<sub>0.7</sub>In<sub>0.15</sub>Ga<sub>0.15</sub>N back-barrier layer and an N-type locally doped AlGaN barrier layer (BD-HEMT), based on conventional device architecture. The Al<sub>0.7</sub>In<sub>0.15</sub>Ga<sub>0.15</sub>N back-barrier layer effectively confines electrons within the channel, thereby increasing the electron concentration. Simultaneously, the N-type locally doped AlGaN barrier layer introduced beneath the gate supplies additional electrons to the channel, further enhancing the electron density. These modifications collectively lead to improved DC and RF characteristics of the device. Compared to the conventional AlGaN/GaN HEMT, BD-HEMT achieves a 24.8% increase in saturation drain current and a 10.4% improvement in maximum transconductance. Furthermore, the maximum cutoff frequency and maximum oscillation frequency are enhanced by 14.8% and 21.2%, respectively.https://www.mdpi.com/2072-666X/16/7/779GaN HEMTDC and RF characteristicsback-barrier layerlocally doped barrier layer |
| spellingShingle | Shuxiang Sun Lulu Liu Gangchuan Qu Xintong Xie J. Ajayan Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer Micromachines GaN HEMT DC and RF characteristics back-barrier layer locally doped barrier layer |
| title | Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer |
| title_full | Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer |
| title_fullStr | Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer |
| title_full_unstemmed | Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer |
| title_short | Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer |
| title_sort | improved dc and rf characteristics of gan hemt using a back barrier and locally doped barrier layer |
| topic | GaN HEMT DC and RF characteristics back-barrier layer locally doped barrier layer |
| url | https://www.mdpi.com/2072-666X/16/7/779 |
| work_keys_str_mv | AT shuxiangsun improveddcandrfcharacteristicsofganhemtusingabackbarrierandlocallydopedbarrierlayer AT lululiu improveddcandrfcharacteristicsofganhemtusingabackbarrierandlocallydopedbarrierlayer AT gangchuanqu improveddcandrfcharacteristicsofganhemtusingabackbarrierandlocallydopedbarrierlayer AT xintongxie improveddcandrfcharacteristicsofganhemtusingabackbarrierandlocallydopedbarrierlayer AT jajayan improveddcandrfcharacteristicsofganhemtusingabackbarrierandlocallydopedbarrierlayer |