The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply
In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short-circuit current and thus reduces the open circui...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2015-12-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2015/4/articles/jnep_2015_V7_04005.pdf |
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| Summary: | In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short-circuit current and thus reduces the open circuit voltage. It has been observed that the concentration of the lightly doped region more significantly influence on the current-voltage characteristics than the depth of the p-n-junction. The concentration of the n-region, equal to 1014 cm – 3, can be considered as during betavoltaic power supply design. It is shown that, by increasing the power supply activity the conversion efficiency of the structure increases, too. |
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| ISSN: | 2077-6772 |