Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Abstract Thin film transistors (TFTs) based on amorphous oxide semiconductors (AOS) are promising candidates for panel displays. However, the trade‐off between mobility and reliability in AOS‐TFTs hinders their further applications in next‐generation display techniques and newly developed logic and...

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Bibliographic Details
Main Authors: Ke Hu, Zean Guo, Jiawei Wang, Congyan Lu, Mingliang Wang, Tianyuan Wang, Fuxi Liao, Guanhua Yang, Nianduan Lu, Ling Li
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Electronic Materials
Subjects:
Amorphous Oxide semiconductor
charge transports
heterostructure
mobility and reliability
thin film transistors
Online Access:https://doi.org/10.1002/aelm.202400266
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