Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer
AlGaN-based ultraviolet-A light-emitting diodes (UVA LEDs) inevitably suffer from current crowding effects at high injection levels due to their lateral device structure, resulting in non-uniform light emission and device overheating. In N-polar UV LEDs, the problem is further exacerbated by increas...
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10138550/ |
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| author | Hongchang Tao Shengrui Xu Yanrong Cao Huake Su Yuan Gao Yachao Zhang Jincheng Zhang Yue Hao |
| author_facet | Hongchang Tao Shengrui Xu Yanrong Cao Huake Su Yuan Gao Yachao Zhang Jincheng Zhang Yue Hao |
| author_sort | Hongchang Tao |
| collection | DOAJ |
| description | AlGaN-based ultraviolet-A light-emitting diodes (UVA LEDs) inevitably suffer from current crowding effects at high injection levels due to their lateral device structure, resulting in non-uniform light emission and device overheating. In N-polar UV LEDs, the problem is further exacerbated by increased hole injection efficiency, leading to current crowding and aggravated hole leakage, which limits the device performance. An n-AlGaN/AlInGaN/AlGaN structure is adopted in this study, through modulation of the Al and In compositions in the AlInGaN quaternary alloy, lattice matching and greater bandgap of AlInGaN to AlGaN template is designed. The numerical results prove that the n-AlGaN/AlInGaN/AlGaN structure can promote current spreading and thus mitigate hole leakage, resulting in the significantly enhanced performance of N-polar UVA LEDs. Furthermore, the use of lattice-matched AlInGaN layers in practical epitaxy is feasible, which can avoid the defect introduction resulting from the lattice mismatch. |
| format | Article |
| id | doaj-art-1d4a1befada04cdb8dd2bd72cf665c7d |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-1d4a1befada04cdb8dd2bd72cf665c7d2025-08-20T03:32:53ZengIEEEIEEE Photonics Journal1943-06552023-01-011531510.1109/JPHOT.2023.328134210138550Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN LayerHongchang Tao0https://orcid.org/0000-0002-9406-056XShengrui Xu1https://orcid.org/0000-0002-6189-8913Yanrong Cao2https://orcid.org/0009-0001-8987-0154Huake Su3https://orcid.org/0000-0002-0642-618XYuan Gao4Yachao Zhang5https://orcid.org/0000-0003-1864-6953Jincheng Zhang6https://orcid.org/0000-0001-7332-6704Yue Hao7https://orcid.org/0000-0002-8081-2919State key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaState key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaSchool of Mechanical and Electrical Engineering, Xidian University, Xi'an, ChinaState key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaState key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaState key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaState key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaState key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaAlGaN-based ultraviolet-A light-emitting diodes (UVA LEDs) inevitably suffer from current crowding effects at high injection levels due to their lateral device structure, resulting in non-uniform light emission and device overheating. In N-polar UV LEDs, the problem is further exacerbated by increased hole injection efficiency, leading to current crowding and aggravated hole leakage, which limits the device performance. An n-AlGaN/AlInGaN/AlGaN structure is adopted in this study, through modulation of the Al and In compositions in the AlInGaN quaternary alloy, lattice matching and greater bandgap of AlInGaN to AlGaN template is designed. The numerical results prove that the n-AlGaN/AlInGaN/AlGaN structure can promote current spreading and thus mitigate hole leakage, resulting in the significantly enhanced performance of N-polar UVA LEDs. Furthermore, the use of lattice-matched AlInGaN layers in practical epitaxy is feasible, which can avoid the defect introduction resulting from the lattice mismatch.https://ieeexplore.ieee.org/document/10138550/AlInGaNlattice-matchingUV LEDs |
| spellingShingle | Hongchang Tao Shengrui Xu Yanrong Cao Huake Su Yuan Gao Yachao Zhang Jincheng Zhang Yue Hao Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer IEEE Photonics Journal AlInGaN lattice-matching UV LEDs |
| title | Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer |
| title_full | Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer |
| title_fullStr | Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer |
| title_full_unstemmed | Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer |
| title_short | Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer |
| title_sort | enhanced performance of n polar algan based ultraviolet light emitting diodes with lattice matched alingan insertion in n algan layer |
| topic | AlInGaN lattice-matching UV LEDs |
| url | https://ieeexplore.ieee.org/document/10138550/ |
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