Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications
In this work, the ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) capacitor with a novel anti-ferroelectric (AFE) ZrO2 seed layer is thoroughly investigated for memory applications, by comparing with both HZO capacitors without seed layer and with O-phase-dominated ZrO2 seed layer. A fully vacuum-sealed syste...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10763514/ |
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