Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications
In this work, the ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) capacitor with a novel anti-ferroelectric (AFE) ZrO2 seed layer is thoroughly investigated for memory applications, by comparing with both HZO capacitors without seed layer and with O-phase-dominated ZrO2 seed layer. A fully vacuum-sealed syste...
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IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10763514/ |
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| author | Mengxuan Yang Kaifeng Wang Bocheng Yu Zhiyuan Fu Chang Su Qianqian Huang Ru Huang |
| author_facet | Mengxuan Yang Kaifeng Wang Bocheng Yu Zhiyuan Fu Chang Su Qianqian Huang Ru Huang |
| author_sort | Mengxuan Yang |
| collection | DOAJ |
| description | In this work, the ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) capacitor with a novel anti-ferroelectric (AFE) ZrO2 seed layer is thoroughly investigated for memory applications, by comparing with both HZO capacitors without seed layer and with O-phase-dominated ZrO2 seed layer. A fully vacuum-sealed system is used for device fabrication to mitigate the interfacial defects during the material growth process, and the process conditions are carefully optimized. Experimental results demonstrated that the ZrO2-based seed layer can enhance ferroelectricity of the HZO capacitor, and the T-phase-dominated ZrO2 seed layer can further largely enhance the endurance to more than <inline-formula> <tex-math notation="LaTeX">$10^{9}$ </tex-math></inline-formula> without ferroelectricity penalty. Detailed analysis are further performed and demonstrated that the enhanced performance is resulted from the significantly suppressed M-phase ratio and oxygen vacancies. The T-phase dominated ZrO2 seed layer results in only 3.7% M-phase ratio in HZO and 12% reduction of trap charge density compared with conventional FE capacitors. Moreover, the slower leakage current growth rate in the interface also helps the endurance improvement in the proposed design, indicating its great potential for high reliable FeRAM application. |
| format | Article |
| id | doaj-art-1c8d9f7dcacb41b5b4bfcd04fe4b5041 |
| institution | DOAJ |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-1c8d9f7dcacb41b5b4bfcd04fe4b50412025-08-20T03:02:14ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-011379279910.1109/JEDS.2024.350484910763514Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory ApplicationsMengxuan Yang0Kaifeng Wang1https://orcid.org/0009-0007-3331-7716Bocheng Yu2Zhiyuan Fu3https://orcid.org/0000-0003-3656-3414Chang Su4Qianqian Huang5https://orcid.org/0000-0002-3714-8581Ru Huang6School of Integrated Circuits, Peking University, Beijing, ChinaSchool of Integrated Circuits, Peking University, Beijing, ChinaSchool of Integrated Circuits, Peking University, Beijing, ChinaSchool of Integrated Circuits, Peking University, Beijing, ChinaSchool of Integrated Circuits, Peking University, Beijing, ChinaSchool of Integrated Circuits, Peking University, Beijing, ChinaSchool of Integrated Circuits, Peking University, Beijing, ChinaIn this work, the ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) capacitor with a novel anti-ferroelectric (AFE) ZrO2 seed layer is thoroughly investigated for memory applications, by comparing with both HZO capacitors without seed layer and with O-phase-dominated ZrO2 seed layer. A fully vacuum-sealed system is used for device fabrication to mitigate the interfacial defects during the material growth process, and the process conditions are carefully optimized. Experimental results demonstrated that the ZrO2-based seed layer can enhance ferroelectricity of the HZO capacitor, and the T-phase-dominated ZrO2 seed layer can further largely enhance the endurance to more than <inline-formula> <tex-math notation="LaTeX">$10^{9}$ </tex-math></inline-formula> without ferroelectricity penalty. Detailed analysis are further performed and demonstrated that the enhanced performance is resulted from the significantly suppressed M-phase ratio and oxygen vacancies. The T-phase dominated ZrO2 seed layer results in only 3.7% M-phase ratio in HZO and 12% reduction of trap charge density compared with conventional FE capacitors. Moreover, the slower leakage current growth rate in the interface also helps the endurance improvement in the proposed design, indicating its great potential for high reliable FeRAM application.https://ieeexplore.ieee.org/document/10763514/FeRAMHZO and ZrO₂ |
| spellingShingle | Mengxuan Yang Kaifeng Wang Bocheng Yu Zhiyuan Fu Chang Su Qianqian Huang Ru Huang Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications IEEE Journal of the Electron Devices Society FeRAM HZO and ZrO₂ |
| title | Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications |
| title_full | Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications |
| title_fullStr | Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications |
| title_full_unstemmed | Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications |
| title_short | Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications |
| title_sort | endurance enhancement in hafnia based ferroelectric capacitor through anti ferroelectric zirconia seed layer for memory applications |
| topic | FeRAM HZO and ZrO₂ |
| url | https://ieeexplore.ieee.org/document/10763514/ |
| work_keys_str_mv | AT mengxuanyang enduranceenhancementinhafniabasedferroelectriccapacitorthroughantiferroelectriczirconiaseedlayerformemoryapplications AT kaifengwang enduranceenhancementinhafniabasedferroelectriccapacitorthroughantiferroelectriczirconiaseedlayerformemoryapplications AT bochengyu enduranceenhancementinhafniabasedferroelectriccapacitorthroughantiferroelectriczirconiaseedlayerformemoryapplications AT zhiyuanfu enduranceenhancementinhafniabasedferroelectriccapacitorthroughantiferroelectriczirconiaseedlayerformemoryapplications AT changsu enduranceenhancementinhafniabasedferroelectriccapacitorthroughantiferroelectriczirconiaseedlayerformemoryapplications AT qianqianhuang enduranceenhancementinhafniabasedferroelectriccapacitorthroughantiferroelectriczirconiaseedlayerformemoryapplications AT ruhuang enduranceenhancementinhafniabasedferroelectriccapacitorthroughantiferroelectriczirconiaseedlayerformemoryapplications |