Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices
Gate-tunable semiconductor nanosystems are getting more and more important in the realization of quantum circuits. While such devices are typically cooled to operation temperature with zero bias applied to the gate, biased cooling corresponds to a non-zero gate voltage being applied before reaching...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0250968 |
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| author | Laura K. Diebel Lukas G. Zinkl Andreas Hötzinger Felix Reichmann Marco Lisker Yuji Yamamoto Dominique Bougeard |
| author_facet | Laura K. Diebel Lukas G. Zinkl Andreas Hötzinger Felix Reichmann Marco Lisker Yuji Yamamoto Dominique Bougeard |
| author_sort | Laura K. Diebel |
| collection | DOAJ |
| description | Gate-tunable semiconductor nanosystems are getting more and more important in the realization of quantum circuits. While such devices are typically cooled to operation temperature with zero bias applied to the gate, biased cooling corresponds to a non-zero gate voltage being applied before reaching the operation temperature. We systematically study the effect of biased cooling on different undoped SiGe/Si/SiGe quantum well field-effect stacks designed to accumulate and density-tune two-dimensional electron gases (2DEGs). In an empirical model, we show that biased cooling of the undoped FES induces a static electric field, which is constant at operation temperature and superimposes onto the field exerted by the top gate onto the 2DEG. We show that the voltage operation window of the field-effect-tuned 2DEG can be chosen in a wide range of voltages via the choice of the biased cooling voltage. Importantly, quality features of the 2DEG such as the mobility or the temporal stability of the 2DEG density remain unaltered under biased cooling. |
| format | Article |
| id | doaj-art-1c70a20cfa9d4e4982369b28fb9f2e28 |
| institution | DOAJ |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-1c70a20cfa9d4e4982369b28fb9f2e282025-08-20T03:03:07ZengAIP Publishing LLCAIP Advances2158-32262025-03-01153035301035301-710.1063/5.0250968Impact of biased cooling on the operation of undoped silicon quantum well field-effect devicesLaura K. Diebel0Lukas G. Zinkl1Andreas Hötzinger2Felix Reichmann3Marco Lisker4Yuji Yamamoto5Dominique Bougeard6Fakultät für Physik, Universität Regensburg, 93040 Regensburg, GermanyFakultät für Physik, Universität Regensburg, 93040 Regensburg, GermanyFakultät für Physik, Universität Regensburg, 93040 Regensburg, GermanyIHP—Leibniz-Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder), GermanyIHP—Leibniz-Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder), GermanyIHP—Leibniz-Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder), GermanyFakultät für Physik, Universität Regensburg, 93040 Regensburg, GermanyGate-tunable semiconductor nanosystems are getting more and more important in the realization of quantum circuits. While such devices are typically cooled to operation temperature with zero bias applied to the gate, biased cooling corresponds to a non-zero gate voltage being applied before reaching the operation temperature. We systematically study the effect of biased cooling on different undoped SiGe/Si/SiGe quantum well field-effect stacks designed to accumulate and density-tune two-dimensional electron gases (2DEGs). In an empirical model, we show that biased cooling of the undoped FES induces a static electric field, which is constant at operation temperature and superimposes onto the field exerted by the top gate onto the 2DEG. We show that the voltage operation window of the field-effect-tuned 2DEG can be chosen in a wide range of voltages via the choice of the biased cooling voltage. Importantly, quality features of the 2DEG such as the mobility or the temporal stability of the 2DEG density remain unaltered under biased cooling.http://dx.doi.org/10.1063/5.0250968 |
| spellingShingle | Laura K. Diebel Lukas G. Zinkl Andreas Hötzinger Felix Reichmann Marco Lisker Yuji Yamamoto Dominique Bougeard Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices AIP Advances |
| title | Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices |
| title_full | Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices |
| title_fullStr | Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices |
| title_full_unstemmed | Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices |
| title_short | Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices |
| title_sort | impact of biased cooling on the operation of undoped silicon quantum well field effect devices |
| url | http://dx.doi.org/10.1063/5.0250968 |
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