Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revea...

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Main Authors: Hung-Pin Hsu, Pong-Hong Yang, Jeng-Kuang Huang, Po-Hung Wu, Ying-Sheng Huang, Cheng Li, Shi-Hao Huang, Kwong-Kau Tiong
Format: Article
Language:English
Published: Wiley 2013-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2013/298190
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author Hung-Pin Hsu
Pong-Hong Yang
Jeng-Kuang Huang
Po-Hung Wu
Ying-Sheng Huang
Cheng Li
Shi-Hao Huang
Kwong-Kau Tiong
author_facet Hung-Pin Hsu
Pong-Hong Yang
Jeng-Kuang Huang
Po-Hung Wu
Ying-Sheng Huang
Cheng Li
Shi-Hao Huang
Kwong-Kau Tiong
author_sort Hung-Pin Hsu
collection DOAJ
description We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.
format Article
id doaj-art-1c3f281d1b9c489e8468480e2a34359d
institution Kabale University
issn 1687-8108
1687-8124
language English
publishDate 2013-01-01
publisher Wiley
record_format Article
series Advances in Condensed Matter Physics
spelling doaj-art-1c3f281d1b9c489e8468480e2a34359d2025-02-03T00:59:15ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242013-01-01201310.1155/2013/298190298190Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual SubstrateHung-Pin Hsu0Pong-Hong Yang1Jeng-Kuang Huang2Po-Hung Wu3Ying-Sheng Huang4Cheng Li5Shi-Hao Huang6Kwong-Kau Tiong7Department of Electronic Engineering, Ming Chi University of Technology, 84 Gungjuan Road, Taishan, Taipei 243, TaiwanDepartment of Electronic Engineering, Ming Chi University of Technology, 84 Gungjuan Road, Taishan, Taipei 243, TaiwanDepartment of Electronic Engineering, Ming Chi University of Technology, 84 Gungjuan Road, Taishan, Taipei 243, TaiwanDepartment of Electronic Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 106, TaiwanDepartment of Electronic Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 106, TaiwanDepartment of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, ChinaDepartment of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, ChinaDepartment of Electrical Engineering, National Taiwan Ocean University, 2 Pei-Ning Road, Keelung 202, TaiwanWe report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.http://dx.doi.org/10.1155/2013/298190
spellingShingle Hung-Pin Hsu
Pong-Hong Yang
Jeng-Kuang Huang
Po-Hung Wu
Ying-Sheng Huang
Cheng Li
Shi-Hao Huang
Kwong-Kau Tiong
Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate
Advances in Condensed Matter Physics
title Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate
title_full Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate
title_fullStr Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate
title_full_unstemmed Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate
title_short Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate
title_sort photoreflectance spectroscopy characterization of ge si0 16ge0 84 multiple quantum wells on ge virtual substrate
url http://dx.doi.org/10.1155/2013/298190
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