Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate
We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revea...
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2013/298190 |
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| author | Hung-Pin Hsu Pong-Hong Yang Jeng-Kuang Huang Po-Hung Wu Ying-Sheng Huang Cheng Li Shi-Hao Huang Kwong-Kau Tiong |
| author_facet | Hung-Pin Hsu Pong-Hong Yang Jeng-Kuang Huang Po-Hung Wu Ying-Sheng Huang Cheng Li Shi-Hao Huang Kwong-Kau Tiong |
| author_sort | Hung-Pin Hsu |
| collection | DOAJ |
| description | We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed. |
| format | Article |
| id | doaj-art-1c3f281d1b9c489e8468480e2a34359d |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-1c3f281d1b9c489e8468480e2a34359d2025-02-03T00:59:15ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242013-01-01201310.1155/2013/298190298190Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual SubstrateHung-Pin Hsu0Pong-Hong Yang1Jeng-Kuang Huang2Po-Hung Wu3Ying-Sheng Huang4Cheng Li5Shi-Hao Huang6Kwong-Kau Tiong7Department of Electronic Engineering, Ming Chi University of Technology, 84 Gungjuan Road, Taishan, Taipei 243, TaiwanDepartment of Electronic Engineering, Ming Chi University of Technology, 84 Gungjuan Road, Taishan, Taipei 243, TaiwanDepartment of Electronic Engineering, Ming Chi University of Technology, 84 Gungjuan Road, Taishan, Taipei 243, TaiwanDepartment of Electronic Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 106, TaiwanDepartment of Electronic Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 106, TaiwanDepartment of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, ChinaDepartment of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, ChinaDepartment of Electrical Engineering, National Taiwan Ocean University, 2 Pei-Ning Road, Keelung 202, TaiwanWe report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.http://dx.doi.org/10.1155/2013/298190 |
| spellingShingle | Hung-Pin Hsu Pong-Hong Yang Jeng-Kuang Huang Po-Hung Wu Ying-Sheng Huang Cheng Li Shi-Hao Huang Kwong-Kau Tiong Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate Advances in Condensed Matter Physics |
| title | Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate |
| title_full | Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate |
| title_fullStr | Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate |
| title_full_unstemmed | Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate |
| title_short | Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate |
| title_sort | photoreflectance spectroscopy characterization of ge si0 16ge0 84 multiple quantum wells on ge virtual substrate |
| url | http://dx.doi.org/10.1155/2013/298190 |
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