Stress control in trench field-plate power MOSFETs and its impact on on-resistance reduction
The limitations regarding lateral cell pitch narrowing and on-resistance reduction were investigated. Trench field plate MOSFETs feature deep trenches with thick oxide films. This disrupts the stress balance, leading to significant wafer warpage, which poses a critical challenge in device integratio...
Saved in:
| Main Authors: | Hiroaki Kato, Shin-ichi Nishizawa, Wataru Saito |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-06-01
|
| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S277237042500015X |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
SiC Double-Trench MOSFETs with an Integrated MOS-Channel Diode for Improved Third-Quadrant Performance
by: Zhiyu Wang, et al.
Published: (2025-02-01) -
Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer
by: Boseong Son, et al.
Published: (2024-01-01) -
Study on Single-event Gate Rupture Mechanism of Asymmetric-trench SiC MOSFET
by: WANG Lihao1, 2, DONG Tao2, FANG Xingyu2, QI Xiaowei2, WANG Liang2, CHEN Miao2, ZHANG Xing1, ZHAO Yuanfu2
Published: (2025-04-01) -
Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes
by: Li Liu, et al.
Published: (2025-06-01) -
A review on research development of SiC trench gate MOSFET technology
by: LUO Haihui, et al.
Published: (2023-09-01)