Stress control in trench field-plate power MOSFETs and its impact on on-resistance reduction
The limitations regarding lateral cell pitch narrowing and on-resistance reduction were investigated. Trench field plate MOSFETs feature deep trenches with thick oxide films. This disrupts the stress balance, leading to significant wafer warpage, which poses a critical challenge in device integratio...
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| Format: | Article |
| Language: | English |
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Elsevier
2025-06-01
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| Series: | Power Electronic Devices and Components |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S277237042500015X |
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| author | Hiroaki Kato Shin-ichi Nishizawa Wataru Saito |
| author_facet | Hiroaki Kato Shin-ichi Nishizawa Wataru Saito |
| author_sort | Hiroaki Kato |
| collection | DOAJ |
| description | The limitations regarding lateral cell pitch narrowing and on-resistance reduction were investigated. Trench field plate MOSFETs feature deep trenches with thick oxide films. This disrupts the stress balance, leading to significant wafer warpage, which poses a critical challenge in device integration. Stress control has become essential for enabling cell pitch narrowing, achieving high breakdown voltage device designs, and implementing innovative device pattern layouts such as dot pattern cell structures. In this study, stress and wafer warpage associated with lateral cell pitch narrowing were estimated using 3D simulations. Based on these results, the on-resistance reduction limit was also estimated through analytical models. For stripe pattern cell structures, pitch narrowing was constrained by both increased wafer warpage and on-resistance saturation. Notably, the X-direction wafer warpage was identified as the limiting factor for pitch narrowing in high breakdown voltage device designs. In contrast, the dot pattern cell structure significantly reduced wafer warpage and allowed narrower pitches compared to the stripe pattern, despite a weakened mobility enhancement effect. |
| format | Article |
| id | doaj-art-1c00fbd483654b85a7ddffd5a764b119 |
| institution | Kabale University |
| issn | 2772-3704 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Power Electronic Devices and Components |
| spelling | doaj-art-1c00fbd483654b85a7ddffd5a764b1192025-08-20T03:47:10ZengElsevierPower Electronic Devices and Components2772-37042025-06-011110009010.1016/j.pedc.2025.100090Stress control in trench field-plate power MOSFETs and its impact on on-resistance reductionHiroaki Kato0Shin-ichi Nishizawa1Wataru Saito2Interdisciplinary Graduate School of Engineering Science, Kyushu University, Fukuoka, 816-8580 Japan; Corresponding author.Research Institute for Applied Mechanics, Kyushu University, Fukuoka, 816-8580 JapanResearch Institute for Applied Mechanics, Kyushu University, Fukuoka, 816-8580 JapanThe limitations regarding lateral cell pitch narrowing and on-resistance reduction were investigated. Trench field plate MOSFETs feature deep trenches with thick oxide films. This disrupts the stress balance, leading to significant wafer warpage, which poses a critical challenge in device integration. Stress control has become essential for enabling cell pitch narrowing, achieving high breakdown voltage device designs, and implementing innovative device pattern layouts such as dot pattern cell structures. In this study, stress and wafer warpage associated with lateral cell pitch narrowing were estimated using 3D simulations. Based on these results, the on-resistance reduction limit was also estimated through analytical models. For stripe pattern cell structures, pitch narrowing was constrained by both increased wafer warpage and on-resistance saturation. Notably, the X-direction wafer warpage was identified as the limiting factor for pitch narrowing in high breakdown voltage device designs. In contrast, the dot pattern cell structure significantly reduced wafer warpage and allowed narrower pitches compared to the stripe pattern, despite a weakened mobility enhancement effect.http://www.sciencedirect.com/science/article/pii/S277237042500015XMOSFETStrainPiezo effectDot cellStripe cellWafer warpage |
| spellingShingle | Hiroaki Kato Shin-ichi Nishizawa Wataru Saito Stress control in trench field-plate power MOSFETs and its impact on on-resistance reduction Power Electronic Devices and Components MOSFET Strain Piezo effect Dot cell Stripe cell Wafer warpage |
| title | Stress control in trench field-plate power MOSFETs and its impact on on-resistance reduction |
| title_full | Stress control in trench field-plate power MOSFETs and its impact on on-resistance reduction |
| title_fullStr | Stress control in trench field-plate power MOSFETs and its impact on on-resistance reduction |
| title_full_unstemmed | Stress control in trench field-plate power MOSFETs and its impact on on-resistance reduction |
| title_short | Stress control in trench field-plate power MOSFETs and its impact on on-resistance reduction |
| title_sort | stress control in trench field plate power mosfets and its impact on on resistance reduction |
| topic | MOSFET Strain Piezo effect Dot cell Stripe cell Wafer warpage |
| url | http://www.sciencedirect.com/science/article/pii/S277237042500015X |
| work_keys_str_mv | AT hiroakikato stresscontrolintrenchfieldplatepowermosfetsanditsimpactononresistancereduction AT shinichinishizawa stresscontrolintrenchfieldplatepowermosfetsanditsimpactononresistancereduction AT watarusaito stresscontrolintrenchfieldplatepowermosfetsanditsimpactononresistancereduction |