Fill Factor Losses in mc-Si Solar Cells
Non-fundamental losses in mc-Si solar cells have been studied. These efficiency losses significantly depend on diode quality and parasitic ohmic resistances that result in the fill factor losses. The fill factor losses in mc-Si solar cells were analyzed by testing of the industrial solar cell lot un...
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| Format: | Article |
| Language: | English |
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Sumy State University
2015-10-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2015/3/articles/jnep_2015_V7_03007.pdf |
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| _version_ | 1849701562312556544 |
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| author | A.V. Prykhodko |
| author_facet | A.V. Prykhodko |
| author_sort | A.V. Prykhodko |
| collection | DOAJ |
| description | Non-fundamental losses in mc-Si solar cells have been studied. These efficiency losses significantly depend on diode quality and parasitic ohmic resistances that result in the fill factor losses. The fill factor losses in mc-Si solar cells were analyzed by testing of the industrial solar cell lot under AM1.5 conditions. The observed fill factor reduction due to both dark saturation current and diode ideality factor increasing is explained by their exponential relationship which has been found experimentally. Additionally, solar cell maximum power losses through the parasitic ohmic resistances have been estimated and discussed. The obtained results may be used to a solar cell efficiency enhancement and hence reduction in a solar electricity cost. |
| format | Article |
| id | doaj-art-1b6a34cbb99040c280010ec6c1793a35 |
| institution | DOAJ |
| issn | 2077-6772 |
| language | English |
| publishDate | 2015-10-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-1b6a34cbb99040c280010ec6c1793a352025-08-20T03:17:54ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722015-10-017303007-103007-4Fill Factor Losses in mc-Si Solar CellsA.V. Prykhodko0Zaporizhzhya National University, 66, Zhukovsky Str., 69600 Zaporizhzhya, UkraineNon-fundamental losses in mc-Si solar cells have been studied. These efficiency losses significantly depend on diode quality and parasitic ohmic resistances that result in the fill factor losses. The fill factor losses in mc-Si solar cells were analyzed by testing of the industrial solar cell lot under AM1.5 conditions. The observed fill factor reduction due to both dark saturation current and diode ideality factor increasing is explained by their exponential relationship which has been found experimentally. Additionally, solar cell maximum power losses through the parasitic ohmic resistances have been estimated and discussed. The obtained results may be used to a solar cell efficiency enhancement and hence reduction in a solar electricity cost.http://jnep.sumdu.edu.ua/download/numbers/2015/3/articles/jnep_2015_V7_03007.pdfSolar cellmc-SiFill factor lossesParasitic ohmic resistanceDark saturation currentDiode ideality facto |
| spellingShingle | A.V. Prykhodko Fill Factor Losses in mc-Si Solar Cells Журнал нано- та електронної фізики Solar cell mc-Si Fill factor losses Parasitic ohmic resistance Dark saturation current Diode ideality facto |
| title | Fill Factor Losses in mc-Si Solar Cells |
| title_full | Fill Factor Losses in mc-Si Solar Cells |
| title_fullStr | Fill Factor Losses in mc-Si Solar Cells |
| title_full_unstemmed | Fill Factor Losses in mc-Si Solar Cells |
| title_short | Fill Factor Losses in mc-Si Solar Cells |
| title_sort | fill factor losses in mc si solar cells |
| topic | Solar cell mc-Si Fill factor losses Parasitic ohmic resistance Dark saturation current Diode ideality facto |
| url | http://jnep.sumdu.edu.ua/download/numbers/2015/3/articles/jnep_2015_V7_03007.pdf |
| work_keys_str_mv | AT avprykhodko fillfactorlossesinmcsisolarcells |