Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses
The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2015/703045 |
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| _version_ | 1849308582388957184 |
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| author | Tsung-Shine Ko Der-Yuh Lin You-Chi He Chen-Chia Kao Bo-Yuan Hu Ray-Hua Horng Fan-Lei Wu Chih-Hung Wu Yu-Li Tsai |
| author_facet | Tsung-Shine Ko Der-Yuh Lin You-Chi He Chen-Chia Kao Bo-Yuan Hu Ray-Hua Horng Fan-Lei Wu Chih-Hung Wu Yu-Li Tsai |
| author_sort | Tsung-Shine Ko |
| collection | DOAJ |
| description | The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 μm. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 μm i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 μm. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality. |
| format | Article |
| id | doaj-art-1abdb4afdced422b91020bb92781e608 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-1abdb4afdced422b91020bb92781e6082025-08-20T03:54:24ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2015-01-01201510.1155/2015/703045703045Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer ThicknessesTsung-Shine Ko0Der-Yuh Lin1You-Chi He2Chen-Chia Kao3Bo-Yuan Hu4Ray-Hua Horng5Fan-Lei Wu6Chih-Hung Wu7Yu-Li Tsai8Department of Electronic Engineering, National Changhua University of Education, No. 1, Jin-De Road, Changhua 500, TaiwanDepartment of Electronic Engineering, National Changhua University of Education, No. 1, Jin-De Road, Changhua 500, TaiwanDepartment of Electronic Engineering, National Changhua University of Education, No. 1, Jin-De Road, Changhua 500, TaiwanDepartment of Electronic Engineering, National Changhua University of Education, No. 1, Jin-De Road, Changhua 500, TaiwanDepartment of Electronic Engineering, National Changhua University of Education, No. 1, Jin-De Road, Changhua 500, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, 250 KuoKuang Road, Taichung 402, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, 250 KuoKuang Road, Taichung 402, TaiwanHigh Concentration Photovoltaic Project, Institute of Nuclear Energy Research, 4th Floor, No. 90, Luke 5th Road, Lujhu District, Kaohsiung 821, TaiwanHigh Concentration Photovoltaic Project, Institute of Nuclear Energy Research, 4th Floor, No. 90, Luke 5th Road, Lujhu District, Kaohsiung 821, TaiwanThe optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 μm. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 μm i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 μm. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.http://dx.doi.org/10.1155/2015/703045 |
| spellingShingle | Tsung-Shine Ko Der-Yuh Lin You-Chi He Chen-Chia Kao Bo-Yuan Hu Ray-Hua Horng Fan-Lei Wu Chih-Hung Wu Yu-Li Tsai Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses International Journal of Photoenergy |
| title | Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses |
| title_full | Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses |
| title_fullStr | Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses |
| title_full_unstemmed | Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses |
| title_short | Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses |
| title_sort | optoelectric properties of gainp p i n solar cells with different i layer thicknesses |
| url | http://dx.doi.org/10.1155/2015/703045 |
| work_keys_str_mv | AT tsungshineko optoelectricpropertiesofgainppinsolarcellswithdifferentilayerthicknesses AT deryuhlin optoelectricpropertiesofgainppinsolarcellswithdifferentilayerthicknesses AT youchihe optoelectricpropertiesofgainppinsolarcellswithdifferentilayerthicknesses AT chenchiakao optoelectricpropertiesofgainppinsolarcellswithdifferentilayerthicknesses AT boyuanhu optoelectricpropertiesofgainppinsolarcellswithdifferentilayerthicknesses AT rayhuahorng optoelectricpropertiesofgainppinsolarcellswithdifferentilayerthicknesses AT fanleiwu optoelectricpropertiesofgainppinsolarcellswithdifferentilayerthicknesses AT chihhungwu optoelectricpropertiesofgainppinsolarcellswithdifferentilayerthicknesses AT yulitsai optoelectricpropertiesofgainppinsolarcellswithdifferentilayerthicknesses |