Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses
The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2015/703045 |
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| Summary: | The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 μm. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 μm i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 μm. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality. |
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| ISSN: | 1110-662X 1687-529X |