Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer
Multi-level operation, conventionally obtained in ferroelectric devices thanks to a domain-dependent inhomogeneous polarization, poses a big challenge for highly-scaled ferroelectric devices, where the number of ferroelectric domains is drastically reduced. In this work, we study a highly scaled bac...
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IEEE
2025-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/10966879/ |
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| author | Chiara Rossi Daniel Lizzit David Esseni |
| author_facet | Chiara Rossi Daniel Lizzit David Esseni |
| author_sort | Chiara Rossi |
| collection | DOAJ |
| description | Multi-level operation, conventionally obtained in ferroelectric devices thanks to a domain-dependent inhomogeneous polarization, poses a big challenge for highly-scaled ferroelectric devices, where the number of ferroelectric domains is drastically reduced. In this work, we study a highly scaled back-end-of-line (BEOL) compatible, ferroelectric field-effect transistor (FeFET) that integrates a metal interlayer in the gate stack. Through analytical models and calibrated TCAD simulations, we show how this device can achieve a multi-level operation exploiting the interplay between the ferroelectric polarization and the charge in the metal interlayer. Such a working principle does not rely on a domain-dependent inhomogeneous polarization, and the device operation is thus ensured also for a homogeneous ferroelectric material. We also demonstrate that the charge in the interlayer can effectively stabilize the ferroelectric polarization even in the absence of a high concentration of trapped charges in the gate stack. The potentiation and depression curves for the readout conductance confirm that the proposed device can be operated as a memristor for neuromorphic computing applications. Moreover, we show how the choice of the dielectric in the metal-ferroelectric-dielectric-metal gate stack can be used as a design knob to reduce the device operation voltage. |
| format | Article |
| id | doaj-art-1ab81fdfd66a4b5486254da69a3b5e1d |
| institution | OA Journals |
| issn | 2169-3536 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
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| series | IEEE Access |
| spelling | doaj-art-1ab81fdfd66a4b5486254da69a3b5e1d2025-08-20T02:25:04ZengIEEEIEEE Access2169-35362025-01-0113685256853510.1109/ACCESS.2025.356125510966879Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal InterlayerChiara Rossi0https://orcid.org/0000-0001-6976-7486Daniel Lizzit1https://orcid.org/0000-0002-5243-5888David Esseni2https://orcid.org/0000-0002-3468-5197DPIA, University of Udine, Udine, ItalyDPIA, University of Udine, Udine, ItalyDPIA, University of Udine, Udine, ItalyMulti-level operation, conventionally obtained in ferroelectric devices thanks to a domain-dependent inhomogeneous polarization, poses a big challenge for highly-scaled ferroelectric devices, where the number of ferroelectric domains is drastically reduced. In this work, we study a highly scaled back-end-of-line (BEOL) compatible, ferroelectric field-effect transistor (FeFET) that integrates a metal interlayer in the gate stack. Through analytical models and calibrated TCAD simulations, we show how this device can achieve a multi-level operation exploiting the interplay between the ferroelectric polarization and the charge in the metal interlayer. Such a working principle does not rely on a domain-dependent inhomogeneous polarization, and the device operation is thus ensured also for a homogeneous ferroelectric material. We also demonstrate that the charge in the interlayer can effectively stabilize the ferroelectric polarization even in the absence of a high concentration of trapped charges in the gate stack. The potentiation and depression curves for the readout conductance confirm that the proposed device can be operated as a memristor for neuromorphic computing applications. Moreover, we show how the choice of the dielectric in the metal-ferroelectric-dielectric-metal gate stack can be used as a design knob to reduce the device operation voltage.https://ieeexplore.ieee.org/document/10966879/BEOL integrationferroelectric field-effect transistor (FeFET)metal-ferroelectric–metal-insulator–semiconductor (MFMIS)TCAD simulation |
| spellingShingle | Chiara Rossi Daniel Lizzit David Esseni Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer IEEE Access BEOL integration ferroelectric field-effect transistor (FeFET) metal-ferroelectric–metal-insulator–semiconductor (MFMIS) TCAD simulation |
| title | Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer |
| title_full | Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer |
| title_fullStr | Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer |
| title_full_unstemmed | Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer |
| title_short | Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer |
| title_sort | multilevel operation in scaled back end of line ferroelectric fets with a metal interlayer |
| topic | BEOL integration ferroelectric field-effect transistor (FeFET) metal-ferroelectric–metal-insulator–semiconductor (MFMIS) TCAD simulation |
| url | https://ieeexplore.ieee.org/document/10966879/ |
| work_keys_str_mv | AT chiararossi multileveloperationinscaledbackendoflineferroelectricfetswithametalinterlayer AT daniellizzit multileveloperationinscaledbackendoflineferroelectricfetswithametalinterlayer AT davidesseni multileveloperationinscaledbackendoflineferroelectricfetswithametalinterlayer |