Toward high-current-density and high-frequency graphene resonant tunneling transistors

Toward high-current-density and high-frequency graphene resonant tunneling transistors

Abstract Negative differential resistance (NDR), a peculiar electrical property in which current decreases with increasing voltage, is highly desirable for multivalued logic gates, memory devices, and oscillators. Recently, 2D quantum-tunneling NDR devices have attracted considerable attention becau...

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Main Authors: Zihao Zhang, Baoqing Zhang, Yifei Zhang, Yiming Wang, Patrick Hays, Seth Ariel Tongay, Mingyang Wang, Hecheng Han, Hu Li, Jiawei Zhang, Aimin Song
Format: Article
Language:English
Published: Nature Portfolio 2025-05-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-025-58720-7
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https://doi.org/10.1038/s41467-025-58720-7

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