Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques
In this paper, the microcavity effect in quantum dot infrared photodetectors (QDIPs) on a Si substrate, fabricated by means of metal wafer bonding (MWB) and epitaxial lift-off (ELO) processes, was demonstrated by comparing the photocurrent spectrum and the simulated absorption spectrum. Four QDIPs h...
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IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8606424/ |
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| author | Ho Sung Kim G. H. Ryu S. Y. Ahn H. Y. Ryu W. J. Choi |
| author_facet | Ho Sung Kim G. H. Ryu S. Y. Ahn H. Y. Ryu W. J. Choi |
| author_sort | Ho Sung Kim |
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| description | In this paper, the microcavity effect in quantum dot infrared photodetectors (QDIPs) on a Si substrate, fabricated by means of metal wafer bonding (MWB) and epitaxial lift-off (ELO) processes, was demonstrated by comparing the photocurrent spectrum and the simulated absorption spectrum. Four QDIPs having a different cavity length of 1.7, 2.8, 3<italic>,</italic> and 3.4 <italic>μ</italic>m were fabricated and compared with simulation based on the finite-difference time-domain method. The resonance peaks were observed in both photocurrent spectrum and absorption spectrum due to the microcavity formed by the bottom mirror of Pt/Au layer and the flat GaAs/air interface. The peak wavelength of the photocurrent spectrum in all four QDIPs on Si samples shows a good agreement with the simulated absorption spectrum. The bias-dependent photocurrent was also measured to study the microcavity effects more in depth. The ratio of the increased photocurrent under bias condition shows higher value in the microcavity QDIPs, showing that the microcavity contributes to generate photocurrent effectively. From these results, we believe that the MWB and ELO could be useful to make the microcavity in many integrated chemical and biosensing application. |
| format | Article |
| id | doaj-art-19b28bf2973a413faa2ea2c6789842d8 |
| institution | DOAJ |
| issn | 1943-0655 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-19b28bf2973a413faa2ea2c6789842d82025-08-20T03:15:48ZengIEEEIEEE Photonics Journal1943-06552019-01-011111910.1109/JPHOT.2018.28907248606424Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off TechniquesHo Sung Kim0https://orcid.org/0000-0002-6112-1637G. H. Ryu1S. Y. Ahn2H. Y. Ryu3W. J. Choi4Center for Opto-Electronics Materials and Devices, Korea Institute of Science and Technology, Seoul, South KoreaCenter for Opto-Electronics Materials and Devices, Korea Institute of Science and Technology, Seoul, South KoreaCenter for Opto-Electronics Materials and Devices, Korea Institute of Science and Technology, Seoul, South KoreaDepartment of Physics, Inha University, Incheon, South KoreaCenter for Opto-Electronics Materials and Devices, Korea Institute of Science and Technology, Seoul, South KoreaIn this paper, the microcavity effect in quantum dot infrared photodetectors (QDIPs) on a Si substrate, fabricated by means of metal wafer bonding (MWB) and epitaxial lift-off (ELO) processes, was demonstrated by comparing the photocurrent spectrum and the simulated absorption spectrum. Four QDIPs having a different cavity length of 1.7, 2.8, 3<italic>,</italic> and 3.4 <italic>μ</italic>m were fabricated and compared with simulation based on the finite-difference time-domain method. The resonance peaks were observed in both photocurrent spectrum and absorption spectrum due to the microcavity formed by the bottom mirror of Pt/Au layer and the flat GaAs/air interface. The peak wavelength of the photocurrent spectrum in all four QDIPs on Si samples shows a good agreement with the simulated absorption spectrum. The bias-dependent photocurrent was also measured to study the microcavity effects more in depth. The ratio of the increased photocurrent under bias condition shows higher value in the microcavity QDIPs, showing that the microcavity contributes to generate photocurrent effectively. From these results, we believe that the MWB and ELO could be useful to make the microcavity in many integrated chemical and biosensing application.https://ieeexplore.ieee.org/document/8606424/Quantum dot infrared photodetectormicrocavitymetal wafer bondingepitaxial lift-off. |
| spellingShingle | Ho Sung Kim G. H. Ryu S. Y. Ahn H. Y. Ryu W. J. Choi Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques IEEE Photonics Journal Quantum dot infrared photodetector microcavity metal wafer bonding epitaxial lift-off. |
| title | Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques |
| title_full | Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques |
| title_fullStr | Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques |
| title_full_unstemmed | Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques |
| title_short | Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques |
| title_sort | microcavity effect in inas x002f gaas quantum dot infrared photodetector on a si substrate fabricated with metal wafer bonding and epitaxial lift off techniques |
| topic | Quantum dot infrared photodetector microcavity metal wafer bonding epitaxial lift-off. |
| url | https://ieeexplore.ieee.org/document/8606424/ |
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