Investigation of Self-Heating Effect on the Void Embedded SOI MOSFETs
Self-heating effect (SHE) in void embedded SOI (VESOI) MOSFET is analyzed using 3D finite-element method (FEM) to solve modified Fourier heat conduction equations. The induced void beneath the silicon channel results in a 42% increase in peak lattice temperature compared to the SOI MOSFET. The impac...
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| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10750050/ |
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| author | Yizhan Liu Zheng Zhou Xiaoyan Liu |
| author_facet | Yizhan Liu Zheng Zhou Xiaoyan Liu |
| author_sort | Yizhan Liu |
| collection | DOAJ |
| description | Self-heating effect (SHE) in void embedded SOI (VESOI) MOSFET is analyzed using 3D finite-element method (FEM) to solve modified Fourier heat conduction equations. The induced void beneath the silicon channel results in a 42% increase in peak lattice temperature compared to the SOI MOSFET. The impacts of related device geometry and process fluctuation are investigated to provide guidelines for mitigating the self-heating effect in device design, as the scaling-down of the device. The results indicate that the embedded void has a significant impact on device lattice temperature. To efficiently and accurately describe the transient thermal response of the VESOI MOSFET, a SPICE-based thermal RC network is established, achieving an acceleration of over 8000 times. Additionally, a void-length-dependent RC thermal network model is developed with a prediction error less than 1.4%. The proposed model can be utilized to predict the lattice temperature of VESOI MOSFETs with varying void lengths both in steady and transient practical application. |
| format | Article |
| id | doaj-art-198f20b0e7394e6e9b5f5215596eb00d |
| institution | DOAJ |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-198f20b0e7394e6e9b5f5215596eb00d2025-08-20T02:53:06ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-011383183710.1109/JEDS.2024.349503310750050Investigation of Self-Heating Effect on the Void Embedded SOI MOSFETsYizhan Liu0https://orcid.org/0009-0008-9013-7137Zheng Zhou1https://orcid.org/0009-0008-3957-3144Xiaoyan Liu2School of Software and Microelectronics, Peking University, Beijing, ChinaSchool of Integrated Circuits, Peking University, Beijing, ChinaSchool of Integrated Circuits, Peking University, Beijing, ChinaSelf-heating effect (SHE) in void embedded SOI (VESOI) MOSFET is analyzed using 3D finite-element method (FEM) to solve modified Fourier heat conduction equations. The induced void beneath the silicon channel results in a 42% increase in peak lattice temperature compared to the SOI MOSFET. The impacts of related device geometry and process fluctuation are investigated to provide guidelines for mitigating the self-heating effect in device design, as the scaling-down of the device. The results indicate that the embedded void has a significant impact on device lattice temperature. To efficiently and accurately describe the transient thermal response of the VESOI MOSFET, a SPICE-based thermal RC network is established, achieving an acceleration of over 8000 times. Additionally, a void-length-dependent RC thermal network model is developed with a prediction error less than 1.4%. The proposed model can be utilized to predict the lattice temperature of VESOI MOSFETs with varying void lengths both in steady and transient practical application.https://ieeexplore.ieee.org/document/10750050/Self-heating effectSOIFEMvoid embedded silicon on insulatorSPICE |
| spellingShingle | Yizhan Liu Zheng Zhou Xiaoyan Liu Investigation of Self-Heating Effect on the Void Embedded SOI MOSFETs IEEE Journal of the Electron Devices Society Self-heating effect SOI FEM void embedded silicon on insulator SPICE |
| title | Investigation of Self-Heating Effect on the Void Embedded SOI MOSFETs |
| title_full | Investigation of Self-Heating Effect on the Void Embedded SOI MOSFETs |
| title_fullStr | Investigation of Self-Heating Effect on the Void Embedded SOI MOSFETs |
| title_full_unstemmed | Investigation of Self-Heating Effect on the Void Embedded SOI MOSFETs |
| title_short | Investigation of Self-Heating Effect on the Void Embedded SOI MOSFETs |
| title_sort | investigation of self heating effect on the void embedded soi mosfets |
| topic | Self-heating effect SOI FEM void embedded silicon on insulator SPICE |
| url | https://ieeexplore.ieee.org/document/10750050/ |
| work_keys_str_mv | AT yizhanliu investigationofselfheatingeffectonthevoidembeddedsoimosfets AT zhengzhou investigationofselfheatingeffectonthevoidembeddedsoimosfets AT xiaoyanliu investigationofselfheatingeffectonthevoidembeddedsoimosfets |