Thermal Performance of 940 nm AlGaAs-Based VCSELs Grown on Germanium

VCSEL thermal resistances are determined from power-current-voltage-wavelength measurements performed on nominally identical epitaxial structures grown on Ge and GaAs substrates. We show that the effective thermal conductivity of the VCSEL is increased when grown on Ge substrates.

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Main Authors: Jack Baker, Craig P. Allford, Sara Gillgrass, J. Iwan Davies, Samuel Shutts, Peter M. Smowton
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10933508/
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author Jack Baker
Craig P. Allford
Sara Gillgrass
J. Iwan Davies
Samuel Shutts
Peter M. Smowton
author_facet Jack Baker
Craig P. Allford
Sara Gillgrass
J. Iwan Davies
Samuel Shutts
Peter M. Smowton
author_sort Jack Baker
collection DOAJ
description VCSEL thermal resistances are determined from power-current-voltage-wavelength measurements performed on nominally identical epitaxial structures grown on Ge and GaAs substrates. We show that the effective thermal conductivity of the VCSEL is increased when grown on Ge substrates.
format Article
id doaj-art-1987922c9dab4c4590fdebe0bf79c330
institution DOAJ
issn 1943-0655
language English
publishDate 2025-01-01
publisher IEEE
record_format Article
series IEEE Photonics Journal
spelling doaj-art-1987922c9dab4c4590fdebe0bf79c3302025-08-20T03:17:43ZengIEEEIEEE Photonics Journal1943-06552025-01-011721410.1109/JPHOT.2025.355295110933508Thermal Performance of 940 nm AlGaAs-Based VCSELs Grown on GermaniumJack Baker0https://orcid.org/0000-0003-1379-0673Craig P. Allford1https://orcid.org/0000-0002-3798-9014Sara Gillgrass2https://orcid.org/0000-0003-2611-9168J. Iwan Davies3Samuel Shutts4https://orcid.org/0000-0001-6751-7790Peter M. Smowton5https://orcid.org/0000-0002-9105-4842School of Physics and Astronomy, Cardiff University, Translational Research Hub, Cardiff, U.K.School of Physics and Astronomy, Cardiff University, Translational Research Hub, Cardiff, U.K.School of Physics and Astronomy, Cardiff University, Translational Research Hub, Cardiff, U.K.IQE PLC, St Mellons, Cardiff, U.K.School of Physics and Astronomy, Cardiff University, Translational Research Hub, Cardiff, U.K.School of Physics and Astronomy and the Institute for Compound Semiconductors, Cardiff University, Translational Research Hub, Cardiff, U.K.VCSEL thermal resistances are determined from power-current-voltage-wavelength measurements performed on nominally identical epitaxial structures grown on Ge and GaAs substrates. We show that the effective thermal conductivity of the VCSEL is increased when grown on Ge substrates.https://ieeexplore.ieee.org/document/10933508/VCSELGaAsGethermal resistance
spellingShingle Jack Baker
Craig P. Allford
Sara Gillgrass
J. Iwan Davies
Samuel Shutts
Peter M. Smowton
Thermal Performance of 940 nm AlGaAs-Based VCSELs Grown on Germanium
IEEE Photonics Journal
VCSEL
GaAs
Ge
thermal resistance
title Thermal Performance of 940 nm AlGaAs-Based VCSELs Grown on Germanium
title_full Thermal Performance of 940 nm AlGaAs-Based VCSELs Grown on Germanium
title_fullStr Thermal Performance of 940 nm AlGaAs-Based VCSELs Grown on Germanium
title_full_unstemmed Thermal Performance of 940 nm AlGaAs-Based VCSELs Grown on Germanium
title_short Thermal Performance of 940 nm AlGaAs-Based VCSELs Grown on Germanium
title_sort thermal performance of 940 nm algaas based vcsels grown on germanium
topic VCSEL
GaAs
Ge
thermal resistance
url https://ieeexplore.ieee.org/document/10933508/
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AT jiwandavies thermalperformanceof940nmalgaasbasedvcselsgrownongermanium
AT samuelshutts thermalperformanceof940nmalgaasbasedvcselsgrownongermanium
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