Achieving superior thermoelectric transport in bismuth antimony telluride thin films via orientation and microstructure regulation
The electron-phonon transport properties of bismuth telluride-based thermoelectric materials are significantly influenced by crystallographic orientation and microstructure engineering. Thin-film materials are proper candidates for the study of structure-property relationship due to abundant microst...
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Science Press
2025-04-01
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| Series: | National Science Open |
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| Online Access: | https://www.sciengine.com/doi/10.1360/nso/20250008 |
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| author | Qu Youyang Zhao Bing Zhao Weiyun Deng Yuan |
| author_facet | Qu Youyang Zhao Bing Zhao Weiyun Deng Yuan |
| author_sort | Qu Youyang |
| collection | DOAJ |
| description | The electron-phonon transport properties of bismuth telluride-based thermoelectric materials are significantly influenced by crystallographic orientation and microstructure engineering. Thin-film materials are proper candidates for the study of structure-property relationship due to abundant microstructures. However, comprehensive studies on thin-film thermoelectric materials remain insufficient. Here, we synthesize p-type Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> thin films via magnetron sputtering and followed by heat treatment. Preferential growth orientation of thin films exhibits a strong dependence on deposition conditions, allowing targeted orientation engineering through process parameter optimization. A high sputtering pressure of <sc>3 Pa</sc> produces Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> thin films with preferred in-plane orientation. The post-heat treatment enables precise regulation of electron-phonon coupling efficiency by engineering defect configurations. The dislocation density was reduced after annealing, and anti-site defects can also be tuned to optimized carrier concentration and mobility. After the heat annealing process under 400°C, a super high zT value of 1.49 was achieved at <sc>313 K</sc> in Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> thin film. |
| format | Article |
| id | doaj-art-18f36ae8680e47b4af258e4c0f830ec7 |
| institution | OA Journals |
| issn | 2097-1168 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Science Press |
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| series | National Science Open |
| spelling | doaj-art-18f36ae8680e47b4af258e4c0f830ec72025-08-20T01:54:57ZengScience PressNational Science Open2097-11682025-04-01410.1360/nso/20250008eb33e642Achieving superior thermoelectric transport in bismuth antimony telluride thin films via orientation and microstructure regulationQu Youyang0Zhao Bing1Zhao Weiyun2Deng Yuan3["School of Materials Science & Engineering, Beihang University, Beijing 100083, China"]["School of Materials Science & Engineering, Beihang University, Beijing 100083, China"]["Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou 310052, China"]["School of Materials Science & Engineering, Beihang University, Beijing 100083, China","Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute of Beihang University, Hangzhou 310052, China"]The electron-phonon transport properties of bismuth telluride-based thermoelectric materials are significantly influenced by crystallographic orientation and microstructure engineering. Thin-film materials are proper candidates for the study of structure-property relationship due to abundant microstructures. However, comprehensive studies on thin-film thermoelectric materials remain insufficient. Here, we synthesize p-type Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> thin films via magnetron sputtering and followed by heat treatment. Preferential growth orientation of thin films exhibits a strong dependence on deposition conditions, allowing targeted orientation engineering through process parameter optimization. A high sputtering pressure of <sc>3 Pa</sc> produces Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> thin films with preferred in-plane orientation. The post-heat treatment enables precise regulation of electron-phonon coupling efficiency by engineering defect configurations. The dislocation density was reduced after annealing, and anti-site defects can also be tuned to optimized carrier concentration and mobility. After the heat annealing process under 400°C, a super high zT value of 1.49 was achieved at <sc>313 K</sc> in Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> thin film.https://www.sciengine.com/doi/10.1360/nso/20250008thermoelectricbismuth antimony telluridemagnetron sputteringmicrostructureelectron-phonon transport |
| spellingShingle | Qu Youyang Zhao Bing Zhao Weiyun Deng Yuan Achieving superior thermoelectric transport in bismuth antimony telluride thin films via orientation and microstructure regulation National Science Open thermoelectric bismuth antimony telluride magnetron sputtering microstructure electron-phonon transport |
| title | Achieving superior thermoelectric transport in bismuth antimony telluride thin films via orientation and microstructure regulation |
| title_full | Achieving superior thermoelectric transport in bismuth antimony telluride thin films via orientation and microstructure regulation |
| title_fullStr | Achieving superior thermoelectric transport in bismuth antimony telluride thin films via orientation and microstructure regulation |
| title_full_unstemmed | Achieving superior thermoelectric transport in bismuth antimony telluride thin films via orientation and microstructure regulation |
| title_short | Achieving superior thermoelectric transport in bismuth antimony telluride thin films via orientation and microstructure regulation |
| title_sort | achieving superior thermoelectric transport in bismuth antimony telluride thin films via orientation and microstructure regulation |
| topic | thermoelectric bismuth antimony telluride magnetron sputtering microstructure electron-phonon transport |
| url | https://www.sciengine.com/doi/10.1360/nso/20250008 |
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