High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium–Tin–Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure

High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium–Tin–Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure

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Bibliographic Details
Main Authors:	Huimin Su, Linfeng Lan, Jintao Xu, Qi Zhou, Yaping Li, Dechun Zeng, Shuai Yang, Baozhong Chen, Junbiao Peng
Format:	Article
Language:	English
Published:	American Chemical Society 2025-02-01
Series:	ACS Omega
Online Access:	https://doi.org/10.1021/acsomega.4c09994
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