High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium–Tin–Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure

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Main Authors: Huimin Su, Linfeng Lan, Jintao Xu, Qi Zhou, Yaping Li, Dechun Zeng, Shuai Yang, Baozhong Chen, Junbiao Peng
Format: Article
Language:English
Published: American Chemical Society 2025-02-01
Series:ACS Omega
Online Access:https://doi.org/10.1021/acsomega.4c09994
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author Huimin Su
Linfeng Lan
Jintao Xu
Qi Zhou
Yaping Li
Dechun Zeng
Shuai Yang
Baozhong Chen
Junbiao Peng
author_facet Huimin Su
Linfeng Lan
Jintao Xu
Qi Zhou
Yaping Li
Dechun Zeng
Shuai Yang
Baozhong Chen
Junbiao Peng
author_sort Huimin Su
collection DOAJ
format Article
id doaj-art-18e45fab8edd4259924bb0c5763dfb93
institution OA Journals
issn 2470-1343
language English
publishDate 2025-02-01
publisher American Chemical Society
record_format Article
series ACS Omega
spelling doaj-art-18e45fab8edd4259924bb0c5763dfb932025-08-20T02:02:58ZengAmerican Chemical SocietyACS Omega2470-13432025-02-011088262827010.1021/acsomega.4c09994High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium–Tin–Zinc-Oxide Thin-Film Transistors with a Stacked-Channel StructureHuimin Su0Linfeng Lan1Jintao Xu2Qi Zhou3Yaping Li4Dechun Zeng5Shuai Yang6Baozhong Chen7Junbiao Peng8State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Chinahttps://doi.org/10.1021/acsomega.4c09994
spellingShingle Huimin Su
Linfeng Lan
Jintao Xu
Qi Zhou
Yaping Li
Dechun Zeng
Shuai Yang
Baozhong Chen
Junbiao Peng
High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium–Tin–Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure
ACS Omega
title High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium–Tin–Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure
title_full High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium–Tin–Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure
title_fullStr High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium–Tin–Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure
title_full_unstemmed High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium–Tin–Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure
title_short High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium–Tin–Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure
title_sort high mobility high photostability tetravalent terbium doped indium tin zinc oxide thin film transistors with a stacked channel structure
url https://doi.org/10.1021/acsomega.4c09994
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