Manufacturing Practices for Silicon-Based Power Diode in Fast Recovery Applications
This paper reports a fast recovery semiconductor diode that was developed for use in high power applications. The diode constructed in disc-type ceramic package with a peak-inverse voltage rating of 2800 V and current rating of 710 A was fabricated using float-zone (FZ) silicon wafer as the starting...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0914-0920.pdf |
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| author | N. Harihara Krishnan N. Anandarao Vikram Kumar Yadav K.N. Jayaraman Ganesh Sanjeev |
| author_facet | N. Harihara Krishnan N. Anandarao Vikram Kumar Yadav K.N. Jayaraman Ganesh Sanjeev |
| author_sort | N. Harihara Krishnan |
| collection | DOAJ |
| description | This paper reports a fast recovery semiconductor diode that was developed for use in high power applications. The diode constructed in disc-type ceramic package with a peak-inverse voltage rating of 2800 V and current rating of 710 A was fabricated using float-zone (FZ) silicon wafer as the starting raw material. Alternate processes viz. gold diffusion, gamma irradiation and electron irradiation were explored for control of carrier lifetime required to tune the switching response of the diode to the desired value of 8 μs. The paper compares the results of these alternate processes. The diodes were fabricated and tested for forward conduction, reverse blocking and switching characteristics. The measured values were observed to be comparable with the design requirements. The paper presents an overview of the design, manufacturing and testing practices adopted to meet the desired diode characteristics and ratings. |
| format | Article |
| id | doaj-art-18bedc91829d4f8d8ea9e5e9ea95e2ee |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-18bedc91829d4f8d8ea9e5e9ea95e2ee2025-08-20T02:01:10ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722011-01-0131914920Manufacturing Practices for Silicon-Based Power Diode in Fast Recovery ApplicationsN. Harihara KrishnanN. AnandaraoVikram Kumar YadavK.N. JayaramanGanesh SanjeevThis paper reports a fast recovery semiconductor diode that was developed for use in high power applications. The diode constructed in disc-type ceramic package with a peak-inverse voltage rating of 2800 V and current rating of 710 A was fabricated using float-zone (FZ) silicon wafer as the starting raw material. Alternate processes viz. gold diffusion, gamma irradiation and electron irradiation were explored for control of carrier lifetime required to tune the switching response of the diode to the desired value of 8 μs. The paper compares the results of these alternate processes. The diodes were fabricated and tested for forward conduction, reverse blocking and switching characteristics. The measured values were observed to be comparable with the design requirements. The paper presents an overview of the design, manufacturing and testing practices adopted to meet the desired diode characteristics and ratings.http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0914-0920.pdfSemiconductor devicesFast recovery diodesElectron irradiationGold diffusionReverse recovery characteristics. |
| spellingShingle | N. Harihara Krishnan N. Anandarao Vikram Kumar Yadav K.N. Jayaraman Ganesh Sanjeev Manufacturing Practices for Silicon-Based Power Diode in Fast Recovery Applications Журнал нано- та електронної фізики Semiconductor devices Fast recovery diodes Electron irradiation Gold diffusion Reverse recovery characteristics. |
| title | Manufacturing Practices for Silicon-Based Power Diode in Fast Recovery Applications |
| title_full | Manufacturing Practices for Silicon-Based Power Diode in Fast Recovery Applications |
| title_fullStr | Manufacturing Practices for Silicon-Based Power Diode in Fast Recovery Applications |
| title_full_unstemmed | Manufacturing Practices for Silicon-Based Power Diode in Fast Recovery Applications |
| title_short | Manufacturing Practices for Silicon-Based Power Diode in Fast Recovery Applications |
| title_sort | manufacturing practices for silicon based power diode in fast recovery applications |
| topic | Semiconductor devices Fast recovery diodes Electron irradiation Gold diffusion Reverse recovery characteristics. |
| url | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0914-0920.pdf |
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