Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation
Abstract GaN is rapidly gaining attention for implementation in power electronics but is still impacted by its high density of threading dislocations (TDs), which have been shown to facilitate current leakage through devices limiting their performance and reliability. Here, we discuss a novel implem...
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Nature Portfolio
2025-01-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-83398-0 |
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| author | Matthias Daeumer Jae-Hyuck Yoo Zhiyu Xu Minkyu Cho Marzieh Bakhtiary-Noodeh Theeradetch Detchprohm Yuxuan Zhang Vijay Gopal Thirupakuzi Vangipuram Vishank Talesara Yibo Xu Edward Letts Daryl Key Tian T. Li Qinghui Shao Russell Dupuis Shyh-Chiang Shen Wu Lu Hongping Zhao Tadao Hashimoto Ted A. Laurence |
| author_facet | Matthias Daeumer Jae-Hyuck Yoo Zhiyu Xu Minkyu Cho Marzieh Bakhtiary-Noodeh Theeradetch Detchprohm Yuxuan Zhang Vijay Gopal Thirupakuzi Vangipuram Vishank Talesara Yibo Xu Edward Letts Daryl Key Tian T. Li Qinghui Shao Russell Dupuis Shyh-Chiang Shen Wu Lu Hongping Zhao Tadao Hashimoto Ted A. Laurence |
| author_sort | Matthias Daeumer |
| collection | DOAJ |
| description | Abstract GaN is rapidly gaining attention for implementation in power electronics but is still impacted by its high density of threading dislocations (TDs), which have been shown to facilitate current leakage through devices limiting their performance and reliability. Here, we discuss a novel implementation of photoluminescence (PL) imaging to study TDs in regions within vertically structured p-i-n GaN (PIN) diodes consisting of metalorganic chemical vapor deposition (MOCVD) epitaxial layers grown on ammonothermal GaN (am-GaN) substrates. PL imaging with a sub-bandgap excitation energy (3.1 eV) reveals TDs with excellent clarity in three dimensions within the am-GaN substrate. Galvanometric-driven PL imaging allows the microstructure of hundreds of devices to be characterized in a single session, enhancing the screening process through the addition of device specific TD location tracking and density mapping. The visibility, structural characteristics, luminescent nature and evolution of TDs through the GaN growth process are described, potentially providing the ability to define TD structures associated with leakage current. |
| format | Article |
| id | doaj-art-18724553a56646bb83ed1f58f1073e34 |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-18724553a56646bb83ed1f58f1073e342025-01-05T12:21:48ZengNature PortfolioScientific Reports2045-23222025-01-011511810.1038/s41598-024-83398-0Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitationMatthias Daeumer0Jae-Hyuck Yoo1Zhiyu Xu2Minkyu Cho3Marzieh Bakhtiary-Noodeh4Theeradetch Detchprohm5Yuxuan Zhang6Vijay Gopal Thirupakuzi Vangipuram7Vishank Talesara8Yibo Xu9Edward Letts10Daryl Key11Tian T. Li12Qinghui Shao13Russell Dupuis14Shyh-Chiang Shen15Wu Lu16Hongping Zhao17Tadao Hashimoto18Ted A. Laurence19Lawrence Livermore National LabLawrence Livermore National LabSchool of Electrical and Computer Engineering, Georgia Institute of TechnologySchool of Electrical and Computer Engineering, Georgia Institute of TechnologySchool of Materials Science and Engineering, Georgia Institute of TechnologySchool of Electrical and Computer Engineering, Georgia Institute of TechnologyDepartment of Electrical and Computer Engineering, The Ohio State UniversityDepartment of Electrical and Computer Engineering, The Ohio State UniversityDepartment of Electrical and Computer Engineering, The Ohio State UniversityDepartment of Electrical and Computer Engineering, The Ohio State UniversitySixPoint MaterialsSixPoint MaterialsLawrence Livermore National LabLawrence Livermore National LabSchool of Electrical and Computer Engineering, Georgia Institute of TechnologySchool of Electrical and Computer Engineering, Georgia Institute of TechnologyDepartment of Electrical and Computer Engineering, The Ohio State UniversityDepartment of Electrical and Computer Engineering, The Ohio State UniversitySixPoint MaterialsLawrence Livermore National LabAbstract GaN is rapidly gaining attention for implementation in power electronics but is still impacted by its high density of threading dislocations (TDs), which have been shown to facilitate current leakage through devices limiting their performance and reliability. Here, we discuss a novel implementation of photoluminescence (PL) imaging to study TDs in regions within vertically structured p-i-n GaN (PIN) diodes consisting of metalorganic chemical vapor deposition (MOCVD) epitaxial layers grown on ammonothermal GaN (am-GaN) substrates. PL imaging with a sub-bandgap excitation energy (3.1 eV) reveals TDs with excellent clarity in three dimensions within the am-GaN substrate. Galvanometric-driven PL imaging allows the microstructure of hundreds of devices to be characterized in a single session, enhancing the screening process through the addition of device specific TD location tracking and density mapping. The visibility, structural characteristics, luminescent nature and evolution of TDs through the GaN growth process are described, potentially providing the ability to define TD structures associated with leakage current.https://doi.org/10.1038/s41598-024-83398-0 |
| spellingShingle | Matthias Daeumer Jae-Hyuck Yoo Zhiyu Xu Minkyu Cho Marzieh Bakhtiary-Noodeh Theeradetch Detchprohm Yuxuan Zhang Vijay Gopal Thirupakuzi Vangipuram Vishank Talesara Yibo Xu Edward Letts Daryl Key Tian T. Li Qinghui Shao Russell Dupuis Shyh-Chiang Shen Wu Lu Hongping Zhao Tadao Hashimoto Ted A. Laurence Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation Scientific Reports |
| title | Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation |
| title_full | Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation |
| title_fullStr | Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation |
| title_full_unstemmed | Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation |
| title_short | Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation |
| title_sort | three dimensional photoluminescence imaging of threading dislocations in gan by sub band optical excitation |
| url | https://doi.org/10.1038/s41598-024-83398-0 |
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