An Approach to Increase Power-Added Efficiency in a 5 GHz Class E Power Amplifier in 0.18 µm CMOS Technology
A new approach to increasing the power-added efficiency (PAE) of a class E power amplifier (PA) is proposed in this paper. The PA operates at a 5 GHz frequency and a reactance compensation technique is utilized to maximize the bandwidth at the operating frequency. The driver stage creates either a h...
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Format: | Article |
Language: | English |
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Wiley
2023-01-01
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Series: | IET Circuits, Devices and Systems |
Online Access: | http://dx.doi.org/10.1049/2023/5586912 |
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author | Hemad Heidari Jobaneh |
author_facet | Hemad Heidari Jobaneh |
author_sort | Hemad Heidari Jobaneh |
collection | DOAJ |
description | A new approach to increasing the power-added efficiency (PAE) of a class E power amplifier (PA) is proposed in this paper. The PA operates at a 5 GHz frequency and a reactance compensation technique is utilized to maximize the bandwidth at the operating frequency. The driver stage creates either a half-wave rectified sine wave or a half-wave rectified sawtooth wave. By applying each one of the waves, the performance of the PA is examined and PAE = 70% and PAE = 50% is achieved. Plus, the output power of the PA is about 26 dBm when the DC voltage supply is 1.8 V. Advanced design system and TSMC 0.18 µm CMOS process are utilized to carry on the simulation. |
format | Article |
id | doaj-art-186b36e2966c4fb390deb81df241fea7 |
institution | Kabale University |
issn | 1751-8598 |
language | English |
publishDate | 2023-01-01 |
publisher | Wiley |
record_format | Article |
series | IET Circuits, Devices and Systems |
spelling | doaj-art-186b36e2966c4fb390deb81df241fea72025-02-03T06:47:46ZengWileyIET Circuits, Devices and Systems1751-85982023-01-01202310.1049/2023/5586912An Approach to Increase Power-Added Efficiency in a 5 GHz Class E Power Amplifier in 0.18 µm CMOS TechnologyHemad Heidari Jobaneh0Department of Electrical EngineeringA new approach to increasing the power-added efficiency (PAE) of a class E power amplifier (PA) is proposed in this paper. The PA operates at a 5 GHz frequency and a reactance compensation technique is utilized to maximize the bandwidth at the operating frequency. The driver stage creates either a half-wave rectified sine wave or a half-wave rectified sawtooth wave. By applying each one of the waves, the performance of the PA is examined and PAE = 70% and PAE = 50% is achieved. Plus, the output power of the PA is about 26 dBm when the DC voltage supply is 1.8 V. Advanced design system and TSMC 0.18 µm CMOS process are utilized to carry on the simulation.http://dx.doi.org/10.1049/2023/5586912 |
spellingShingle | Hemad Heidari Jobaneh An Approach to Increase Power-Added Efficiency in a 5 GHz Class E Power Amplifier in 0.18 µm CMOS Technology IET Circuits, Devices and Systems |
title | An Approach to Increase Power-Added Efficiency in a 5 GHz Class E Power Amplifier in 0.18 µm CMOS Technology |
title_full | An Approach to Increase Power-Added Efficiency in a 5 GHz Class E Power Amplifier in 0.18 µm CMOS Technology |
title_fullStr | An Approach to Increase Power-Added Efficiency in a 5 GHz Class E Power Amplifier in 0.18 µm CMOS Technology |
title_full_unstemmed | An Approach to Increase Power-Added Efficiency in a 5 GHz Class E Power Amplifier in 0.18 µm CMOS Technology |
title_short | An Approach to Increase Power-Added Efficiency in a 5 GHz Class E Power Amplifier in 0.18 µm CMOS Technology |
title_sort | approach to increase power added efficiency in a 5 ghz class e power amplifier in 0 18 µm cmos technology |
url | http://dx.doi.org/10.1049/2023/5586912 |
work_keys_str_mv | AT hemadheidarijobaneh anapproachtoincreasepoweraddedefficiencyina5ghzclassepoweramplifierin018μmcmostechnology AT hemadheidarijobaneh approachtoincreasepoweraddedefficiencyina5ghzclassepoweramplifierin018μmcmostechnology |