Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes
Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT) model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperat...
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| Format: | Article |
| Language: | English |
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Wiley
2010-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2010/526929 |
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| author | P. Pipinys V. Lapeika |
| author_facet | P. Pipinys V. Lapeika |
| author_sort | P. Pipinys |
| collection | DOAJ |
| description | Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT) model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K) using for calculation the effective mass of 0.222 me. and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy) are also explicable in the framework of the PhAT model. |
| format | Article |
| id | doaj-art-17ff53fe79f44478bd71a39d36f4a209 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2010-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-17ff53fe79f44478bd71a39d36f4a2092025-08-20T03:54:21ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242010-01-01201010.1155/2010/526929526929Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky DiodesP. Pipinys0V. Lapeika1Department of Physics, Vilnius Pedagogical University, 08106 Vilnius, LithuaniaDepartment of Physics, Vilnius Pedagogical University, 08106 Vilnius, LithuaniaTemperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT) model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K) using for calculation the effective mass of 0.222 me. and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy) are also explicable in the framework of the PhAT model.http://dx.doi.org/10.1155/2010/526929 |
| spellingShingle | P. Pipinys V. Lapeika Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes Advances in Condensed Matter Physics |
| title | Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes |
| title_full | Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes |
| title_fullStr | Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes |
| title_full_unstemmed | Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes |
| title_short | Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes |
| title_sort | analysis of reverse bias leakage current mechanisms in metal gan schottky diodes |
| url | http://dx.doi.org/10.1155/2010/526929 |
| work_keys_str_mv | AT ppipinys analysisofreversebiasleakagecurrentmechanismsinmetalganschottkydiodes AT vlapeika analysisofreversebiasleakagecurrentmechanismsinmetalganschottkydiodes |