Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells
Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/341518 |
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| _version_ | 1832561894493257728 |
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| author | Zhouling Wang Yu Hu Wei Li Guanggen Zeng Lianghuan Feng Jingquan Zhang Lili Wu Jingjing Gao |
| author_facet | Zhouling Wang Yu Hu Wei Li Guanggen Zeng Lianghuan Feng Jingquan Zhang Lili Wu Jingjing Gao |
| author_sort | Zhouling Wang |
| collection | DOAJ |
| description | Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes. |
| format | Article |
| id | doaj-art-17ce7658909941f09511f51d4cd1e805 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-17ce7658909941f09511f51d4cd1e8052025-02-03T01:23:51ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/341518341518Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar CellsZhouling Wang0Yu Hu1Wei Li2Guanggen Zeng3Lianghuan Feng4Jingquan Zhang5Lili Wu6Jingjing Gao7College of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaAntimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.http://dx.doi.org/10.1155/2014/341518 |
| spellingShingle | Zhouling Wang Yu Hu Wei Li Guanggen Zeng Lianghuan Feng Jingquan Zhang Lili Wu Jingjing Gao Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells International Journal of Photoenergy |
| title | Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells |
| title_full | Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells |
| title_fullStr | Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells |
| title_full_unstemmed | Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells |
| title_short | Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells |
| title_sort | effect of annealing on the properties of antimony telluride thin films and their applications in cdte solar cells |
| url | http://dx.doi.org/10.1155/2014/341518 |
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