Synthetic Strategies and Applications of GaN Nanowires
GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic dev...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2014/456163 |
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| _version_ | 1832548380545384448 |
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| author | Guoquan Suo Shuai Jiang Juntao Zhang Jianye Li Meng He |
| author_facet | Guoquan Suo Shuai Jiang Juntao Zhang Jianye Li Meng He |
| author_sort | Guoquan Suo |
| collection | DOAJ |
| description | GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed. |
| format | Article |
| id | doaj-art-17640983f44844fd936de681906ec345 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-17640983f44844fd936de681906ec3452025-02-03T06:14:08ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242014-01-01201410.1155/2014/456163456163Synthetic Strategies and Applications of GaN NanowiresGuoquan Suo0Shuai Jiang1Juntao Zhang2Jianye Li3Meng He4University of Science and Technology Beijing, Beijing 100083, ChinaUniversity of Science and Technology Beijing, Beijing 100083, ChinaUniversity of Science and Technology Beijing, Beijing 100083, ChinaUniversity of Science and Technology Beijing, Beijing 100083, ChinaNational Center for Nanoscience and Technology, Beijing 100190, ChinaGaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.http://dx.doi.org/10.1155/2014/456163 |
| spellingShingle | Guoquan Suo Shuai Jiang Juntao Zhang Jianye Li Meng He Synthetic Strategies and Applications of GaN Nanowires Advances in Condensed Matter Physics |
| title | Synthetic Strategies and Applications of GaN Nanowires |
| title_full | Synthetic Strategies and Applications of GaN Nanowires |
| title_fullStr | Synthetic Strategies and Applications of GaN Nanowires |
| title_full_unstemmed | Synthetic Strategies and Applications of GaN Nanowires |
| title_short | Synthetic Strategies and Applications of GaN Nanowires |
| title_sort | synthetic strategies and applications of gan nanowires |
| url | http://dx.doi.org/10.1155/2014/456163 |
| work_keys_str_mv | AT guoquansuo syntheticstrategiesandapplicationsofgannanowires AT shuaijiang syntheticstrategiesandapplicationsofgannanowires AT juntaozhang syntheticstrategiesandapplicationsofgannanowires AT jianyeli syntheticstrategiesandapplicationsofgannanowires AT menghe syntheticstrategiesandapplicationsofgannanowires |