Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs
Thorough investigations of the low-frequency noise (LFN) in a fully depleted silicon-on-insulator technology node have been accomplished, pointing out on the contribution of the buried oxide (BOX) and the Si-BOX interface to the total drain current noise level. A new analytical multilayer gate stack...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2020-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2020/7989238 |
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