Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall
Abstract Elastic relaxation of lattice misfit strain via traction‐free surface results in complex 3D strain distribution and morphological modification at the boundary of epitaxial heterostructure. While this phenomenon is extensively studied, the influence of the interface coherency constraining th...
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| Format: | Article |
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Wiley
2025-05-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202408736 |
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| author | Jongil Kim Jinwook Yeo Bumsu Park Jeehun Jeong Seunghwa Ryu Sang Ho Oh |
| author_facet | Jongil Kim Jinwook Yeo Bumsu Park Jeehun Jeong Seunghwa Ryu Sang Ho Oh |
| author_sort | Jongil Kim |
| collection | DOAJ |
| description | Abstract Elastic relaxation of lattice misfit strain via traction‐free surface results in complex 3D strain distribution and morphological modification at the boundary of epitaxial heterostructure. While this phenomenon is extensively studied, the influence of the interface coherency constraining the strain relaxation has received little attention. Here it is shown that the interfacial shear stresses arise toward the traction free sidewall of microscale light emitting diode (LED) wires while the two complementary strained InGaN and GaN layers are relaxed to revert their bulk lattice parameters near the sidewall. The shear stresses with opposite signs achieve mechanical equilibrium by counterbalancing the change in the sign of the in‐plane strain in each layer of the near‐surface region. A unique nonmonotonic modulation of both normal and shear strain is detected unambiguously in the strain maps and corroborated by finite element modeling. An analytical model is developed based on the Airy stress function, which incorporates the superposition of alternating in‐plane pre‐stress and the image stress to satisfy the boundary condition. The resultant complex strain fields in microscale LEDs, where surface emission is dominant, alter strain‐induced piezoelectric polarization near the surface, significantly affecting electro‐optical efficiency and resulting in spectral broadening and/or wavelength shifts in emitted light. |
| format | Article |
| id | doaj-art-16ba53ac69f240b58d330a2acdc1c8b4 |
| institution | Kabale University |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Wiley |
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| series | Advanced Science |
| spelling | doaj-art-16ba53ac69f240b58d330a2acdc1c8b42025-08-20T03:47:33ZengWileyAdvanced Science2198-38442025-05-011219n/an/a10.1002/advs.202408736Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED SidewallJongil Kim0Jinwook Yeo1Bumsu Park2Jeehun Jeong3Seunghwa Ryu4Sang Ho Oh5Department of Energy Engineering Institute of Energy Materials and Devices Korea Institute of Energy Technology (KENTECH) Naju 58330 Republic of KoreaDepartment of Mechanical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of KoreaCEMES‐CNRS 29 rue. J. Marvig Toulouse 31055 FranceDepartment of Energy Engineering Institute of Energy Materials and Devices Korea Institute of Energy Technology (KENTECH) Naju 58330 Republic of KoreaDepartment of Mechanical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of KoreaDepartment of Energy Engineering Institute of Energy Materials and Devices Korea Institute of Energy Technology (KENTECH) Naju 58330 Republic of KoreaAbstract Elastic relaxation of lattice misfit strain via traction‐free surface results in complex 3D strain distribution and morphological modification at the boundary of epitaxial heterostructure. While this phenomenon is extensively studied, the influence of the interface coherency constraining the strain relaxation has received little attention. Here it is shown that the interfacial shear stresses arise toward the traction free sidewall of microscale light emitting diode (LED) wires while the two complementary strained InGaN and GaN layers are relaxed to revert their bulk lattice parameters near the sidewall. The shear stresses with opposite signs achieve mechanical equilibrium by counterbalancing the change in the sign of the in‐plane strain in each layer of the near‐surface region. A unique nonmonotonic modulation of both normal and shear strain is detected unambiguously in the strain maps and corroborated by finite element modeling. An analytical model is developed based on the Airy stress function, which incorporates the superposition of alternating in‐plane pre‐stress and the image stress to satisfy the boundary condition. The resultant complex strain fields in microscale LEDs, where surface emission is dominant, alter strain‐induced piezoelectric polarization near the surface, significantly affecting electro‐optical efficiency and resulting in spectral broadening and/or wavelength shifts in emitted light.https://doi.org/10.1002/advs.202408736GaNinterfacelight emitting diodesmicrowirestraintransmission electron microscopy |
| spellingShingle | Jongil Kim Jinwook Yeo Bumsu Park Jeehun Jeong Seunghwa Ryu Sang Ho Oh Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall Advanced Science GaN interface light emitting diodes microwire strain transmission electron microscopy |
| title | Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall |
| title_full | Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall |
| title_fullStr | Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall |
| title_full_unstemmed | Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall |
| title_short | Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall |
| title_sort | elastic relaxation of coherent ingan gan interfaces at the microwire led sidewall |
| topic | GaN interface light emitting diodes microwire strain transmission electron microscopy |
| url | https://doi.org/10.1002/advs.202408736 |
| work_keys_str_mv | AT jongilkim elasticrelaxationofcoherentinganganinterfacesatthemicrowireledsidewall AT jinwookyeo elasticrelaxationofcoherentinganganinterfacesatthemicrowireledsidewall AT bumsupark elasticrelaxationofcoherentinganganinterfacesatthemicrowireledsidewall AT jeehunjeong elasticrelaxationofcoherentinganganinterfacesatthemicrowireledsidewall AT seunghwaryu elasticrelaxationofcoherentinganganinterfacesatthemicrowireledsidewall AT sanghooh elasticrelaxationofcoherentinganganinterfacesatthemicrowireledsidewall |