Semiconductor‐to‐metal transition in platinum dichalcogenides induced by niobium dichalcogenides

Abstract Metallizing 2D semiconductors is a crucial research area with significant applications, such as reducing the contact resistance at metal/2D semiconductor interfaces. This is a key challenge in the realization of next‐generation low‐power and high‐performance devices. While various methods e...

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Bibliographic Details
Main Authors: Lei Zhang, Xin Zhou, Tong Yang, Yuan Chen, Fangjie Wang, Haoge Cheng, Dechun Zhou, Goki Eda, Zheng Liu, Andrew T. S. Wee
Format: Article
Language:English
Published: Wiley 2025-06-01
Series:InfoMat
Subjects:
Online Access:https://doi.org/10.1002/inf2.70010
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