Semiconductor‐to‐metal transition in platinum dichalcogenides induced by niobium dichalcogenides
Abstract Metallizing 2D semiconductors is a crucial research area with significant applications, such as reducing the contact resistance at metal/2D semiconductor interfaces. This is a key challenge in the realization of next‐generation low‐power and high‐performance devices. While various methods e...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2025-06-01
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| Series: | InfoMat |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/inf2.70010 |
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