Laser Process for Selective Emitter Silicon Solar Cells
Selective emitter solar cells can provide a significant increase in conversion efficiency. However current approaches need many technological steps and alignment procedures. This paper reports on a preliminary attempt to reduce the number of processing steps and therefore the cost of selective emitt...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/413863 |
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| author | G. Poulain D. Blanc A. Focsa B. Bazer-Bachi M. Gauthier B. Semmache Y. Pellegrin N. Le Quang M. Lemiti |
| author_facet | G. Poulain D. Blanc A. Focsa B. Bazer-Bachi M. Gauthier B. Semmache Y. Pellegrin N. Le Quang M. Lemiti |
| author_sort | G. Poulain |
| collection | DOAJ |
| description | Selective emitter solar cells can provide a significant increase in conversion efficiency. However current approaches need many technological steps and alignment procedures. This paper reports on a preliminary attempt to reduce the number of processing steps and therefore the cost of selective emitter cells. In the developed procedure, a phosphorous glass covered with silicon nitride acts as the doping source. A laser is used to open locally the antireflection coating and at the same time achieve local phosphorus diffusion. In this process the standard chemical etching of the phosphorous glass is avoided. Sheet resistance variation from 100 Ω/sq to 40 Ω/sq is demonstrated with a nanosecond UV laser. Numerical simulation of the laser-matter interaction is discussed to understand the dopant diffusion efficiency. Preliminary solar cells results show a 0.5% improvement compared with a homogeneous emitter structure. |
| format | Article |
| id | doaj-art-15d90f6822184b26a09387b39034fa20 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-15d90f6822184b26a09387b39034fa202025-02-03T05:59:28ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/413863413863Laser Process for Selective Emitter Silicon Solar CellsG. Poulain0D. Blanc1A. Focsa2B. Bazer-Bachi3M. Gauthier4B. Semmache5Y. Pellegrin6N. Le Quang7M. Lemiti8Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Université de Lyon, 69621 Villeurbanne, FranceInstitut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Université de Lyon, 69621 Villeurbanne, FranceInstitut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Université de Lyon, 69621 Villeurbanne, FranceInstitut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Université de Lyon, 69621 Villeurbanne, FrancePhotowatt International S.A.S., 33 rue Saint Honoré, 38300 Bourgoin-Jallieu, FranceSEMCO Engineering, 625, rue de la Croix Verte-Parc Euromédecine, 34196 Montpellier Cedex 5, FranceSEMCO Engineering, 625, rue de la Croix Verte-Parc Euromédecine, 34196 Montpellier Cedex 5, FrancePhotowatt International S.A.S., 33 rue Saint Honoré, 38300 Bourgoin-Jallieu, FranceInstitut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Université de Lyon, 69621 Villeurbanne, FranceSelective emitter solar cells can provide a significant increase in conversion efficiency. However current approaches need many technological steps and alignment procedures. This paper reports on a preliminary attempt to reduce the number of processing steps and therefore the cost of selective emitter cells. In the developed procedure, a phosphorous glass covered with silicon nitride acts as the doping source. A laser is used to open locally the antireflection coating and at the same time achieve local phosphorus diffusion. In this process the standard chemical etching of the phosphorous glass is avoided. Sheet resistance variation from 100 Ω/sq to 40 Ω/sq is demonstrated with a nanosecond UV laser. Numerical simulation of the laser-matter interaction is discussed to understand the dopant diffusion efficiency. Preliminary solar cells results show a 0.5% improvement compared with a homogeneous emitter structure.http://dx.doi.org/10.1155/2012/413863 |
| spellingShingle | G. Poulain D. Blanc A. Focsa B. Bazer-Bachi M. Gauthier B. Semmache Y. Pellegrin N. Le Quang M. Lemiti Laser Process for Selective Emitter Silicon Solar Cells International Journal of Photoenergy |
| title | Laser Process for Selective Emitter Silicon Solar Cells |
| title_full | Laser Process for Selective Emitter Silicon Solar Cells |
| title_fullStr | Laser Process for Selective Emitter Silicon Solar Cells |
| title_full_unstemmed | Laser Process for Selective Emitter Silicon Solar Cells |
| title_short | Laser Process for Selective Emitter Silicon Solar Cells |
| title_sort | laser process for selective emitter silicon solar cells |
| url | http://dx.doi.org/10.1155/2012/413863 |
| work_keys_str_mv | AT gpoulain laserprocessforselectiveemittersiliconsolarcells AT dblanc laserprocessforselectiveemittersiliconsolarcells AT afocsa laserprocessforselectiveemittersiliconsolarcells AT bbazerbachi laserprocessforselectiveemittersiliconsolarcells AT mgauthier laserprocessforselectiveemittersiliconsolarcells AT bsemmache laserprocessforselectiveemittersiliconsolarcells AT ypellegrin laserprocessforselectiveemittersiliconsolarcells AT nlequang laserprocessforselectiveemittersiliconsolarcells AT mlemiti laserprocessforselectiveemittersiliconsolarcells |