Cryogenic Hyperdimensional In-Memory Computing Using Ferroelectric TCAM

Cryogenic Hyperdimensional In-Memory Computing Using Ferroelectric TCAM

Cryogenic operations of electronics present a significant step forward to achieve huge demand of in-memory computing (IMC) for high-performance computing, quantum computing, and military applications. Ferroelectric (FE) is a promising candidate to develop the complementary metal oxide semiconductor...

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Bibliographic Details
Main Authors: Shivendra Singh Parihar, Shubham Kumar, Swetaki Chatterjee, Girish Pahwa, Yogesh Singh Chauhan, Hussam Amrouch
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
5-nm fin field-effect transistor (FinFET)
compact modeling
cryogenic complementary metal oxide semiconductor (CMOS)
ferroelectric fin field-effect transistor (FeFinFET)
hyperdimensional computing (HDC)
in-memory computing (IMC)
Online Access:https://ieeexplore.ieee.org/document/10909519/
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