Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™
Since the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising. Research on novel materials and device structures is required to meet t...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2025-01-01
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| Series: | E3S Web of Conferences |
| Subjects: | |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2025/01/e3sconf_icegc2024_00047.pdf |
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