Recent research progress of SiC superjunction devices
Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power. Although SiC power diodes and metal-oxide-semiconductor field effect transistors (MOSFETs) have good device performance...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2023-09-01
|
| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.004 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849729218547548160 |
|---|---|
| author | ZHANG Jinping ZHANG Kun CHEN Wei WANG Jie ZHANG Bo |
| author_facet | ZHANG Jinping ZHANG Kun CHEN Wei WANG Jie ZHANG Bo |
| author_sort | ZHANG Jinping |
| collection | DOAJ |
| description | Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power. Although SiC power diodes and metal-oxide-semiconductor field effect transistors (MOSFETs) have good device performance and are widely applied, the one-dimensional theoretical limit of them as unipolar devices still limits the further performance improvement of conventional SiC power devices. As a technology widely used on silicon-based devices, superjunction (SJ) structure can significantly improve the tradeoff between the breakdown voltage and specific on-resistance and thus enhance the performance of the devices. In recent years, SiC SJ devices have become a hot research topic and significant progress has been made in relevant researches. The latest research progress and development direction in the device design and simulation, modeling research, SJ manufacturing process technology of SiC SJ devices were reviewed and summarized in this paper. |
| format | Article |
| id | doaj-art-156e975bca1d4aa59117ba2a57a73c03 |
| institution | DOAJ |
| issn | 1000-128X |
| language | zho |
| publishDate | 2023-09-01 |
| publisher | Editorial Department of Electric Drive for Locomotives |
| record_format | Article |
| series | 机车电传动 |
| spelling | doaj-art-156e975bca1d4aa59117ba2a57a73c032025-08-20T03:09:16ZzhoEditorial Department of Electric Drive for Locomotives机车电传动1000-128X2023-09-01364542839685Recent research progress of SiC superjunction devicesZHANG JinpingZHANG KunCHEN WeiWANG JieZHANG BoBecause of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power. Although SiC power diodes and metal-oxide-semiconductor field effect transistors (MOSFETs) have good device performance and are widely applied, the one-dimensional theoretical limit of them as unipolar devices still limits the further performance improvement of conventional SiC power devices. As a technology widely used on silicon-based devices, superjunction (SJ) structure can significantly improve the tradeoff between the breakdown voltage and specific on-resistance and thus enhance the performance of the devices. In recent years, SiC SJ devices have become a hot research topic and significant progress has been made in relevant researches. The latest research progress and development direction in the device design and simulation, modeling research, SJ manufacturing process technology of SiC SJ devices were reviewed and summarized in this paper.http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.004silicon carbide (SiC)superjunction (SJ)diodemetal-oxide-semiconductor field effect transistor (MOSFET)research progress |
| spellingShingle | ZHANG Jinping ZHANG Kun CHEN Wei WANG Jie ZHANG Bo Recent research progress of SiC superjunction devices 机车电传动 silicon carbide (SiC) superjunction (SJ) diode metal-oxide-semiconductor field effect transistor (MOSFET) research progress |
| title | Recent research progress of SiC superjunction devices |
| title_full | Recent research progress of SiC superjunction devices |
| title_fullStr | Recent research progress of SiC superjunction devices |
| title_full_unstemmed | Recent research progress of SiC superjunction devices |
| title_short | Recent research progress of SiC superjunction devices |
| title_sort | recent research progress of sic superjunction devices |
| topic | silicon carbide (SiC) superjunction (SJ) diode metal-oxide-semiconductor field effect transistor (MOSFET) research progress |
| url | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.004 |
| work_keys_str_mv | AT zhangjinping recentresearchprogressofsicsuperjunctiondevices AT zhangkun recentresearchprogressofsicsuperjunctiondevices AT chenwei recentresearchprogressofsicsuperjunctiondevices AT wangjie recentresearchprogressofsicsuperjunctiondevices AT zhangbo recentresearchprogressofsicsuperjunctiondevices |