Recent research progress of SiC superjunction devices
Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power. Although SiC power diodes and metal-oxide-semiconductor field effect transistors (MOSFETs) have good device performance...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2023-09-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.004 |
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| Summary: | Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power. Although SiC power diodes and metal-oxide-semiconductor field effect transistors (MOSFETs) have good device performance and are widely applied, the one-dimensional theoretical limit of them as unipolar devices still limits the further performance improvement of conventional SiC power devices. As a technology widely used on silicon-based devices, superjunction (SJ) structure can significantly improve the tradeoff between the breakdown voltage and specific on-resistance and thus enhance the performance of the devices. In recent years, SiC SJ devices have become a hot research topic and significant progress has been made in relevant researches. The latest research progress and development direction in the device design and simulation, modeling research, SJ manufacturing process technology of SiC SJ devices were reviewed and summarized in this paper. |
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| ISSN: | 1000-128X |