Enhanced cryogenic thermoelectric cooling of Bi0.5Sb1.5Te3 by carrier optimization

Abstract As the best‐performing materials for thermoelectric cooling, Bi2Te3‐based alloys have long attracted attention to optimizing the room‐temperature performance of Bi2Te3 for both power generation and refrigeration applications. This focus leads to less emphasis and fewer reports on the coolin...

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Main Authors: Xuemei Wang, Zhiwei Chen, Shuxian Zhang, Xinyue Zhang, Rui Zhou, Wen Li, Jun Luo, Yanzhong Pei
Format: Article
Language:English
Published: Wiley 2025-05-01
Series:InfoMat
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Online Access:https://doi.org/10.1002/inf2.12663
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author Xuemei Wang
Zhiwei Chen
Shuxian Zhang
Xinyue Zhang
Rui Zhou
Wen Li
Jun Luo
Yanzhong Pei
author_facet Xuemei Wang
Zhiwei Chen
Shuxian Zhang
Xinyue Zhang
Rui Zhou
Wen Li
Jun Luo
Yanzhong Pei
author_sort Xuemei Wang
collection DOAJ
description Abstract As the best‐performing materials for thermoelectric cooling, Bi2Te3‐based alloys have long attracted attention to optimizing the room‐temperature performance of Bi2Te3 for both power generation and refrigeration applications. This focus leads to less emphasis and fewer reports on the cooling capability below room temperature. Given that the optimal carrier concentration (nopt) for maximizing the cooling power is highly temperature dependent, roughly following the relationship nopt∝T3/2, lowering the carrier concentration is essential to improve the cooling capability at cryogenic temperatures. Taking p‐type Bi0.5Sb1.5Te3 as an example, careful control of doping in this work enables a reduction in carrier concentration to 1.7 × 1019 cm−3 from its optimum at 300 K of 3.4 × 1019 cm−3. This work successfully shifts the temperature at which the thermoelectric figure of merit (zT) peaks down to 315 K, with an average zT as high as 0.8 from 180 to 300 K. Further pairing with commercial n‐type Bi2Te3‐alloys, the cooling device realizes a temperature drop as large as 68 K from 300 K and 24 K from 180 K, demonstrating the extended cooling capability of thermoelectric coolers at cryogenic temperatures.
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issn 2567-3165
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spelling doaj-art-1364a4b200d04562b4a3801c0f236b132025-08-20T03:13:32ZengWileyInfoMat2567-31652025-05-0175n/an/a10.1002/inf2.12663Enhanced cryogenic thermoelectric cooling of Bi0.5Sb1.5Te3 by carrier optimizationXuemei Wang0Zhiwei Chen1Shuxian Zhang2Xinyue Zhang3Rui Zhou4Wen Li5Jun Luo6Yanzhong Pei7Interdisciplinary Materials Research Center, School of Materials Science and Engineering Tongji University Shanghai the People's Republic of ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering Tongji University Shanghai the People's Republic of ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering Tongji University Shanghai the People's Republic of ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering Tongji University Shanghai the People's Republic of ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering Tongji University Shanghai the People's Republic of ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering Tongji University Shanghai the People's Republic of ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering Tongji University Shanghai the People's Republic of ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering Tongji University Shanghai the People's Republic of ChinaAbstract As the best‐performing materials for thermoelectric cooling, Bi2Te3‐based alloys have long attracted attention to optimizing the room‐temperature performance of Bi2Te3 for both power generation and refrigeration applications. This focus leads to less emphasis and fewer reports on the cooling capability below room temperature. Given that the optimal carrier concentration (nopt) for maximizing the cooling power is highly temperature dependent, roughly following the relationship nopt∝T3/2, lowering the carrier concentration is essential to improve the cooling capability at cryogenic temperatures. Taking p‐type Bi0.5Sb1.5Te3 as an example, careful control of doping in this work enables a reduction in carrier concentration to 1.7 × 1019 cm−3 from its optimum at 300 K of 3.4 × 1019 cm−3. This work successfully shifts the temperature at which the thermoelectric figure of merit (zT) peaks down to 315 K, with an average zT as high as 0.8 from 180 to 300 K. Further pairing with commercial n‐type Bi2Te3‐alloys, the cooling device realizes a temperature drop as large as 68 K from 300 K and 24 K from 180 K, demonstrating the extended cooling capability of thermoelectric coolers at cryogenic temperatures.https://doi.org/10.1002/inf2.12663carrier optimizationcryogenic thermoelectric performancep‐type Bi2Te3thermoelectricthermoelectric cooling
spellingShingle Xuemei Wang
Zhiwei Chen
Shuxian Zhang
Xinyue Zhang
Rui Zhou
Wen Li
Jun Luo
Yanzhong Pei
Enhanced cryogenic thermoelectric cooling of Bi0.5Sb1.5Te3 by carrier optimization
InfoMat
carrier optimization
cryogenic thermoelectric performance
p‐type Bi2Te3
thermoelectric
thermoelectric cooling
title Enhanced cryogenic thermoelectric cooling of Bi0.5Sb1.5Te3 by carrier optimization
title_full Enhanced cryogenic thermoelectric cooling of Bi0.5Sb1.5Te3 by carrier optimization
title_fullStr Enhanced cryogenic thermoelectric cooling of Bi0.5Sb1.5Te3 by carrier optimization
title_full_unstemmed Enhanced cryogenic thermoelectric cooling of Bi0.5Sb1.5Te3 by carrier optimization
title_short Enhanced cryogenic thermoelectric cooling of Bi0.5Sb1.5Te3 by carrier optimization
title_sort enhanced cryogenic thermoelectric cooling of bi0 5sb1 5te3 by carrier optimization
topic carrier optimization
cryogenic thermoelectric performance
p‐type Bi2Te3
thermoelectric
thermoelectric cooling
url https://doi.org/10.1002/inf2.12663
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