Titanium Carbide Obtained by Magnetron Sputtering of Graphite on Heated Titanium Substrate
Titanium carbide was synthetized by sputtering graphite target on heated titanium substrate by magnetron sputtering process. The obtained samples were characterized by X-ray diffraction (XRD) analysis and Raman spectroscopy, the elemental analysis was made by Energy-dispersive X-ray spectroscopy (ED...
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| Format: | Article |
| Language: | English |
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Sumy State University
2017-10-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/5/articles/Proof_JNEP_05045.pdf |
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| author | O.E.В Kaipoldayev A.D.В Muradov Y.S.В Mukhametkarimov R.R.В Nemkayeva G.A.В Baigarinova M.B.В Aitzhanov N.R.В Guseinov |
| author_facet | O.E.В Kaipoldayev A.D.В Muradov Y.S.В Mukhametkarimov R.R.В Nemkayeva G.A.В Baigarinova M.B.В Aitzhanov N.R.В Guseinov |
| author_sort | O.E.В Kaipoldayev |
| collection | DOAJ |
| description | Titanium carbide was synthetized by sputtering graphite target on heated titanium substrate by magnetron sputtering process. The obtained samples were characterized by X-ray diffraction (XRD) analysis and Raman spectroscopy, the elemental analysis was made by Energy-dispersive X-ray spectroscopy (EDX). Titanium carbide (TiC) structure was obtained by deposition of sputtered carbon atoms and clusters to the resistively heated titanium substrate surface with temperatures 700В В°C, 800В В°C, 900В В°C and 1000В В°C. The XRD analysis showed that the formation of TiC structure is take place when the substrate is heated to 1000В В°C. The Raman spectroscopy showed that when the incident power of laser is 100В % (35В mW) the structure is unstable in samples with the substrate temperatures 700В В°C, 800В В°C and 900В В°C and the most stable titanium carbide structure is created when the substrate temperature is 1000В В°C. |
| format | Article |
| id | doaj-art-12aca8dadd274b15a3bf04eec07fca4e |
| institution | Kabale University |
| issn | 2077-6772 |
| language | English |
| publishDate | 2017-10-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-12aca8dadd274b15a3bf04eec07fca4e2025-08-20T03:54:20ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722017-10-019505045-105045-310.21272/jnep.9(5).05045Titanium Carbide Obtained by Magnetron Sputtering of Graphite on Heated Titanium SubstrateO.E.В Kaipoldayev0A.D.В Muradov1Y.S.В Mukhametkarimov2R.R.В Nemkayeva3G.A.В Baigarinova4M.B.В Aitzhanov5N.R.В Guseinov6Al-Farabi Kazakh National University, 71, Al-Farabi Ave., 050040 Almaty, KazakhstanAl-Farabi Kazakh National University, 71, Al-Farabi Ave., 050040 Almaty, KazakhstanAl-Farabi Kazakh National University, 71, Al-Farabi Ave., 050040 Almaty, KazakhstanAl-Farabi Kazakh National University, 71, Al-Farabi Ave., 050040 Almaty, KazakhstanAl-Farabi Kazakh National University, 71, Al-Farabi Ave., 050040 Almaty, KazakhstanAl-Farabi Kazakh National University, 71, Al-Farabi Ave., 050040 Almaty, KazakhstanAl-Farabi Kazakh National University, 71, Al-Farabi Ave., 050040 Almaty, KazakhstanTitanium carbide was synthetized by sputtering graphite target on heated titanium substrate by magnetron sputtering process. The obtained samples were characterized by X-ray diffraction (XRD) analysis and Raman spectroscopy, the elemental analysis was made by Energy-dispersive X-ray spectroscopy (EDX). Titanium carbide (TiC) structure was obtained by deposition of sputtered carbon atoms and clusters to the resistively heated titanium substrate surface with temperatures 700В В°C, 800В В°C, 900В В°C and 1000В В°C. The XRD analysis showed that the formation of TiC structure is take place when the substrate is heated to 1000В В°C. The Raman spectroscopy showed that when the incident power of laser is 100В % (35В mW) the structure is unstable in samples with the substrate temperatures 700В В°C, 800В В°C and 900В В°C and the most stable titanium carbide structure is created when the substrate temperature is 1000В В°C.http://jnep.sumdu.edu.ua:8080/download/numbers/2017/5/articles/Proof_JNEP_05045.pdfTitanium carbideMagnetron sputteringRaman spectroscopyTransition-metal carbid |
| spellingShingle | O.E.В Kaipoldayev A.D.В Muradov Y.S.В Mukhametkarimov R.R.В Nemkayeva G.A.В Baigarinova M.B.В Aitzhanov N.R.В Guseinov Titanium Carbide Obtained by Magnetron Sputtering of Graphite on Heated Titanium Substrate Журнал нано- та електронної фізики Titanium carbide Magnetron sputtering Raman spectroscopy Transition-metal carbid |
| title | Titanium Carbide Obtained by Magnetron Sputtering of Graphite on Heated Titanium Substrate |
| title_full | Titanium Carbide Obtained by Magnetron Sputtering of Graphite on Heated Titanium Substrate |
| title_fullStr | Titanium Carbide Obtained by Magnetron Sputtering of Graphite on Heated Titanium Substrate |
| title_full_unstemmed | Titanium Carbide Obtained by Magnetron Sputtering of Graphite on Heated Titanium Substrate |
| title_short | Titanium Carbide Obtained by Magnetron Sputtering of Graphite on Heated Titanium Substrate |
| title_sort | titanium carbide obtained by magnetron sputtering of graphite on heated titanium substrate |
| topic | Titanium carbide Magnetron sputtering Raman spectroscopy Transition-metal carbid |
| url | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/5/articles/Proof_JNEP_05045.pdf |
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