Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates
Deep-ultraviolet emitting structures based on Al<sub>0.65</sub>Ga<sub>0.35</sub>N/Al<sub>0.8</sub>Ga<sub>0.2 </sub>N multiple quantum wells (MQWs), embedded in compositionally graded Al<italic><sub>x</sub></italic>Ga&...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7950896/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849709575585923072 |
|---|---|
| author | Haiding Sun Jian Yin Emanuele Francesco Pecora Luca Dal Negro Roberto Paiella Theodore D. Moustakas |
| author_facet | Haiding Sun Jian Yin Emanuele Francesco Pecora Luca Dal Negro Roberto Paiella Theodore D. Moustakas |
| author_sort | Haiding Sun |
| collection | DOAJ |
| description | Deep-ultraviolet emitting structures based on Al<sub>0.65</sub>Ga<sub>0.35</sub>N/Al<sub>0.8</sub>Ga<sub>0.2 </sub>N multiple quantum wells (MQWs), embedded in compositionally graded Al<italic><sub>x</sub></italic>Ga<sub> 1−</sub><italic><sub>x</sub></italic>N films in the form of graded-index-separate-confinement heterostructure, were grown by molecular beam epitaxy. The graded AlGaN layer blocked threading defects (TDs) in the vicinity of the AlN/AlGaN heterointerface, resulting in a reduction of the TDs in the active layer. The intensity of the transverse-magnetic polarized amplified spontaneous emission spectra with peak emission at 270 nm was found to increase linearly with the number of QWs. Furthermore, while the peak intensity for devices with a single QW varies linearly with the pump fluence, it varies superlinearly for larger number of QWs, suggesting light amplification by stimulated emission. These results are consistent with numerical simulations, which indicate that the confinement of the optical mode in this device structure increases with the number of QWs and simultaneously the threshold under optical pumping decreases with increasing of the number of QWs. Finally, the band structure simulations indicate that the device is in the form of a p-n junction due to polarization-induced p- and n-doping in the compositionally graded Al<sub>x</sub>Ga<sub>1-x</sub>N films on either side of the MQWs, and, thus, could be used for the development of an electrically pumped deep-ultraviolet laser by further optimizing the structures. |
| format | Article |
| id | doaj-art-129f77d51dd446439acaeaf004dceb4c |
| institution | DOAJ |
| issn | 1943-0655 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-129f77d51dd446439acaeaf004dceb4c2025-08-20T03:15:14ZengIEEEIEEE Photonics Journal1943-06552017-01-01941910.1109/JPHOT.2017.27164207950896Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC SubstratesHaiding Sun0Jian Yin1Emanuele Francesco Pecora2Luca Dal Negro3Roberto Paiella4Theodore D. Moustakas5Department of Electrical and Computer Engineering and Photonics Center, Boston University, Boston, MA, USADepartment of Electrical and Computer Engineering and Photonics Center, Boston University, Boston, MA, USADepartment of Electrical and Computer Engineering and Photonics Center, Boston University, Boston, MA, USADepartment of Electrical and Computer Engineering and Photonics Center, Boston University, Boston, MA, USADepartment of Electrical and Computer Engineering and Photonics Center, Boston University, Boston, MA, USADepartment of Electrical and Computer Engineering and Photonics Center, Boston University, Boston, MA, USADeep-ultraviolet emitting structures based on Al<sub>0.65</sub>Ga<sub>0.35</sub>N/Al<sub>0.8</sub>Ga<sub>0.2 </sub>N multiple quantum wells (MQWs), embedded in compositionally graded Al<italic><sub>x</sub></italic>Ga<sub> 1−</sub><italic><sub>x</sub></italic>N films in the form of graded-index-separate-confinement heterostructure, were grown by molecular beam epitaxy. The graded AlGaN layer blocked threading defects (TDs) in the vicinity of the AlN/AlGaN heterointerface, resulting in a reduction of the TDs in the active layer. The intensity of the transverse-magnetic polarized amplified spontaneous emission spectra with peak emission at 270 nm was found to increase linearly with the number of QWs. Furthermore, while the peak intensity for devices with a single QW varies linearly with the pump fluence, it varies superlinearly for larger number of QWs, suggesting light amplification by stimulated emission. These results are consistent with numerical simulations, which indicate that the confinement of the optical mode in this device structure increases with the number of QWs and simultaneously the threshold under optical pumping decreases with increasing of the number of QWs. Finally, the band structure simulations indicate that the device is in the form of a p-n junction due to polarization-induced p- and n-doping in the compositionally graded Al<sub>x</sub>Ga<sub>1-x</sub>N films on either side of the MQWs, and, thus, could be used for the development of an electrically pumped deep-ultraviolet laser by further optimizing the structures.https://ieeexplore.ieee.org/document/7950896/UltravioletAlGaNGRINSCHamplified spontaneous emissionpolarization dopingquantum well. |
| spellingShingle | Haiding Sun Jian Yin Emanuele Francesco Pecora Luca Dal Negro Roberto Paiella Theodore D. Moustakas Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates IEEE Photonics Journal Ultraviolet AlGaN GRINSCH amplified spontaneous emission polarization doping quantum well. |
| title | Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates |
| title_full | Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates |
| title_fullStr | Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates |
| title_full_unstemmed | Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates |
| title_short | Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates |
| title_sort | deep ultraviolet emitting algan multiple quantum well graded index separate confinement heterostructures grown by mbe on sic substrates |
| topic | Ultraviolet AlGaN GRINSCH amplified spontaneous emission polarization doping quantum well. |
| url | https://ieeexplore.ieee.org/document/7950896/ |
| work_keys_str_mv | AT haidingsun deepultravioletemittingalganmultiplequantumwellgradedindexseparateconfinementheterostructuresgrownbymbeonsicsubstrates AT jianyin deepultravioletemittingalganmultiplequantumwellgradedindexseparateconfinementheterostructuresgrownbymbeonsicsubstrates AT emanuelefrancescopecora deepultravioletemittingalganmultiplequantumwellgradedindexseparateconfinementheterostructuresgrownbymbeonsicsubstrates AT lucadalnegro deepultravioletemittingalganmultiplequantumwellgradedindexseparateconfinementheterostructuresgrownbymbeonsicsubstrates AT robertopaiella deepultravioletemittingalganmultiplequantumwellgradedindexseparateconfinementheterostructuresgrownbymbeonsicsubstrates AT theodoredmoustakas deepultravioletemittingalganmultiplequantumwellgradedindexseparateconfinementheterostructuresgrownbymbeonsicsubstrates |