The Effect of Trap Design on the Scalability of Trapped-Ion Quantum Technologies
To increase the power of a trapped-ion quantum information processor, the qubit number, gate speed, and gate fidelity must all increase. All three of these parameters are influenced by the trapping field, which, in turn, depends on the electrode geometry. Here, we consider how the electrode geometry...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
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| Series: | Entropy |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1099-4300/27/6/576 |
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