GeSeTe-based OTS selector integrated with ReRAM for high-density 1S-1R memory arrays
In this study, we developed a high-performance binary Ovonic Threshold Switching (OTS) selector based on GeSeTe and a resistive random access memory (ReRAM) device based on TaOx. These were integrated into a 1 Selector-1 ReRAM (1S-1R) architecture to address challenges in high-density memory and adv...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0252225 |
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