PVT Analysis and Behavioral Modeling of Doherty and Envelope Tracking RF ULP Power Amplifiers using 65 nm CMOS Technology

PVT Analysis and Behavioral Modeling of Doherty and Envelope Tracking RF ULP Power Amplifiers using 65 nm CMOS Technology

This research encompasses both Process-Voltage-Temperature (PVT) considerations and behavioral modeling of two proposed Power Amplifier (PA) designs for wireless communication systems. Process variations, supply voltage changes, and temperature changes provide difficulties for the design and optimi...

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Bibliographic Details
Main Authors: Muhammad Ovais Akhter, Najam M. Amin, Aurangzeb Rashid Masud
Format: Article
Language:English
Published: Sir Syed University of Engineering and Technology, Karachi. 2023-12-01
Series:Sir Syed University Research Journal of Engineering and Technology
Online Access:http://www.sirsyeduniversity.edu.pk/ssurj/rj/index.php/ssurj/article/view/589
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