Monolithic integration of circuits in e-mode GaN HEMT technology
This work presents a power transistor with monolithically integrated gate driver and auxiliary circuit in the same GaN-on-Si die. It presents the design, the characterization and validation tests in a PCB similarly to a final application for this device. The target application is for USB-C chargers...
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-06-01
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| Series: | Power Electronic Devices and Components |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370425000148 |
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| _version_ | 1849468239468298240 |
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| author | Plinio Bau Thanh Hai Phung Stephane Driussi Thomas Beauchene |
| author_facet | Plinio Bau Thanh Hai Phung Stephane Driussi Thomas Beauchene |
| author_sort | Plinio Bau |
| collection | DOAJ |
| description | This work presents a power transistor with monolithically integrated gate driver and auxiliary circuit in the same GaN-on-Si die. It presents the design, the characterization and validation tests in a PCB similarly to a final application for this device. The target application is for USB-C chargers and power supplies for data centers. The technology is 650 V pGaN with Schottky gate. Simulation from -40 to 150 °C are performed and also fabrication process variation analysis (SS, FF) compared to typical values (TT). |
| format | Article |
| id | doaj-art-125819aa97c947c1b79673ae8fc2c00a |
| institution | Kabale University |
| issn | 2772-3704 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Power Electronic Devices and Components |
| spelling | doaj-art-125819aa97c947c1b79673ae8fc2c00a2025-08-20T03:25:54ZengElsevierPower Electronic Devices and Components2772-37042025-06-011110008910.1016/j.pedc.2025.100089Monolithic integration of circuits in e-mode GaN HEMT technologyPlinio Bau0Thanh Hai Phung1Stephane Driussi2Thomas Beauchene3Corresponding author.; Wise-integration, 69 Rue Felix Esclangon 38000, Grenoble, FranceWise-integration, 69 Rue Felix Esclangon 38000, Grenoble, FranceWise-integration, 69 Rue Felix Esclangon 38000, Grenoble, FranceWise-integration, 69 Rue Felix Esclangon 38000, Grenoble, FranceThis work presents a power transistor with monolithically integrated gate driver and auxiliary circuit in the same GaN-on-Si die. It presents the design, the characterization and validation tests in a PCB similarly to a final application for this device. The target application is for USB-C chargers and power supplies for data centers. The technology is 650 V pGaN with Schottky gate. Simulation from -40 to 150 °C are performed and also fabrication process variation analysis (SS, FF) compared to typical values (TT).http://www.sciencedirect.com/science/article/pii/S2772370425000148Gallium nitrideHEMTsGate driversDriver circuitsMonolithic integrated circuitsPower integrated circuits |
| spellingShingle | Plinio Bau Thanh Hai Phung Stephane Driussi Thomas Beauchene Monolithic integration of circuits in e-mode GaN HEMT technology Power Electronic Devices and Components Gallium nitride HEMTs Gate drivers Driver circuits Monolithic integrated circuits Power integrated circuits |
| title | Monolithic integration of circuits in e-mode GaN HEMT technology |
| title_full | Monolithic integration of circuits in e-mode GaN HEMT technology |
| title_fullStr | Monolithic integration of circuits in e-mode GaN HEMT technology |
| title_full_unstemmed | Monolithic integration of circuits in e-mode GaN HEMT technology |
| title_short | Monolithic integration of circuits in e-mode GaN HEMT technology |
| title_sort | monolithic integration of circuits in e mode gan hemt technology |
| topic | Gallium nitride HEMTs Gate drivers Driver circuits Monolithic integrated circuits Power integrated circuits |
| url | http://www.sciencedirect.com/science/article/pii/S2772370425000148 |
| work_keys_str_mv | AT pliniobau monolithicintegrationofcircuitsinemodeganhemttechnology AT thanhhaiphung monolithicintegrationofcircuitsinemodeganhemttechnology AT stephanedriussi monolithicintegrationofcircuitsinemodeganhemttechnology AT thomasbeauchene monolithicintegrationofcircuitsinemodeganhemttechnology |