The Effect of Metal Shielding Layer on Electrostatic Attraction Issue in Glass–Silicon Anodic Bonding
Silicon–glass anode bonding is the key technology in the process of wafer-level packaging for MEMS sensors. During the anodic bonding process, the device may experience adhesion failure due to the influence of electric field forces. A common solution is to add a metal shielding layer between the gla...
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MDPI AG
2024-12-01
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| author | Wenqi Yang Yong Ruan Zhiqiang Song |
| author_facet | Wenqi Yang Yong Ruan Zhiqiang Song |
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| description | Silicon–glass anode bonding is the key technology in the process of wafer-level packaging for MEMS sensors. During the anodic bonding process, the device may experience adhesion failure due to the influence of electric field forces. A common solution is to add a metal shielding layer between the glass substrate and the device. In order to solve the problem of device failure caused by the electrostatic attraction phenomenon, this paper designed a double-ended solidly supported cantilever beam parallel plate capacitor structure, focusing on the study of the critical size of the window opening in the metal layer for the electric field shielding effect. The metal shield consists of 400 Å of Cr and 3400 Å of Au. Based on theoretical calculations, simulation analysis, and experimental testing, it was determined that the critical size for an individual opening in the metal layer is 180 μm × 180 μm, with the movable part positioned 5 μm from the bottom, which does not lead to failure caused by stiction due to electrostatic pull-in of the detection structure. It was proven that the metal shielding layer is effective in avoiding suction problems in secondary anode bonding. |
| format | Article |
| id | doaj-art-1254e51569684cd99dcce8fb8960c217 |
| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
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| series | Micromachines |
| spelling | doaj-art-1254e51569684cd99dcce8fb8960c2172025-01-24T13:41:54ZengMDPI AGMicromachines2072-666X2024-12-011613110.3390/mi16010031The Effect of Metal Shielding Layer on Electrostatic Attraction Issue in Glass–Silicon Anodic BondingWenqi Yang0Yong Ruan1Zhiqiang Song2Instrument Science and Opto-Electronics Engineering, Beijing Information Science and Technology University, Beijing 100192, ChinaDepartment of Precision Instruments, Tsinghua University, Beijing 100084, ChinaZhejiang Xinsheng Semiconductor Technology, Zhuji 311899, ChinaSilicon–glass anode bonding is the key technology in the process of wafer-level packaging for MEMS sensors. During the anodic bonding process, the device may experience adhesion failure due to the influence of electric field forces. A common solution is to add a metal shielding layer between the glass substrate and the device. In order to solve the problem of device failure caused by the electrostatic attraction phenomenon, this paper designed a double-ended solidly supported cantilever beam parallel plate capacitor structure, focusing on the study of the critical size of the window opening in the metal layer for the electric field shielding effect. The metal shield consists of 400 Å of Cr and 3400 Å of Au. Based on theoretical calculations, simulation analysis, and experimental testing, it was determined that the critical size for an individual opening in the metal layer is 180 μm × 180 μm, with the movable part positioned 5 μm from the bottom, which does not lead to failure caused by stiction due to electrostatic pull-in of the detection structure. It was proven that the metal shielding layer is effective in avoiding suction problems in secondary anode bonding.https://www.mdpi.com/2072-666X/16/1/31microelectromechanical systems (MEMS)wafer-level packaginganodic bondingelectrostatic attractiondesign and optimization |
| spellingShingle | Wenqi Yang Yong Ruan Zhiqiang Song The Effect of Metal Shielding Layer on Electrostatic Attraction Issue in Glass–Silicon Anodic Bonding Micromachines microelectromechanical systems (MEMS) wafer-level packaging anodic bonding electrostatic attraction design and optimization |
| title | The Effect of Metal Shielding Layer on Electrostatic Attraction Issue in Glass–Silicon Anodic Bonding |
| title_full | The Effect of Metal Shielding Layer on Electrostatic Attraction Issue in Glass–Silicon Anodic Bonding |
| title_fullStr | The Effect of Metal Shielding Layer on Electrostatic Attraction Issue in Glass–Silicon Anodic Bonding |
| title_full_unstemmed | The Effect of Metal Shielding Layer on Electrostatic Attraction Issue in Glass–Silicon Anodic Bonding |
| title_short | The Effect of Metal Shielding Layer on Electrostatic Attraction Issue in Glass–Silicon Anodic Bonding |
| title_sort | effect of metal shielding layer on electrostatic attraction issue in glass silicon anodic bonding |
| topic | microelectromechanical systems (MEMS) wafer-level packaging anodic bonding electrostatic attraction design and optimization |
| url | https://www.mdpi.com/2072-666X/16/1/31 |
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