Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condi...

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Bibliographic Details
Main Authors:	Yanli Liu, Xifeng Yang, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Format:	Article
Language:	English
Published:	Wiley 2015-01-01
Series:	Advances in Condensed Matter Physics
Online Access:	http://dx.doi.org/10.1155/2015/918428
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