Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique
This work projects photoluminescence (PL) as an alternative technique to estimate the order of resistivity of zinc oxide (ZnO) thin films. ZnO thin films, deposited using chemical spray pyrolysis (CSP) by varying the deposition parameters like solvent, spray rate, pH of precursor, and so forth, have...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2013/105796 |
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| author | N. Poornima T. V. Vimalkumar V. G. Rajeshmon C. Sudha Kartha K. P. Vijayakumar |
| author_facet | N. Poornima T. V. Vimalkumar V. G. Rajeshmon C. Sudha Kartha K. P. Vijayakumar |
| author_sort | N. Poornima |
| collection | DOAJ |
| description | This work projects photoluminescence (PL) as an alternative technique to estimate the order of resistivity of zinc oxide (ZnO) thin films. ZnO thin films, deposited using chemical spray pyrolysis (CSP) by varying the deposition parameters like solvent, spray rate, pH of precursor, and so forth, have been used for this study. Variation in the deposition conditions has tremendous impact on the luminescence properties as well as resistivity. Two emissions could be recorded for all samples—the near band edge emission (NBE) at 380 nm and the deep level emission (DLE) at ~500 nm which are competing in nature. It is observed that the ratio of intensities of DLE to NBE (/) can be reduced by controlling oxygen incorporation in the sample. - measurements indicate that restricting oxygen incorporation reduces resistivity considerably. Variation of / and resistivity for samples prepared under different deposition conditions is similar in nature. / was always less than resistivity by an order for all samples. Thus from PL measurements alone, the order of resistivity of the samples can be estimated. |
| format | Article |
| id | doaj-art-115801265d3243e58db908ccc5dccf34 |
| institution | OA Journals |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-115801265d3243e58db908ccc5dccf342025-08-20T02:01:56ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/105796105796Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence TechniqueN. Poornima0T. V. Vimalkumar1V. G. Rajeshmon2C. Sudha Kartha3K. P. Vijayakumar4Department of Physics, Cochin University of Science and Technology, Cochin, Kerala 682022, IndiaDepartment of Physics, Cochin University of Science and Technology, Cochin, Kerala 682022, IndiaDepartment of Physics, Cochin University of Science and Technology, Cochin, Kerala 682022, IndiaDepartment of Physics, Cochin University of Science and Technology, Cochin, Kerala 682022, IndiaDepartment of Physics, Cochin University of Science and Technology, Cochin, Kerala 682022, IndiaThis work projects photoluminescence (PL) as an alternative technique to estimate the order of resistivity of zinc oxide (ZnO) thin films. ZnO thin films, deposited using chemical spray pyrolysis (CSP) by varying the deposition parameters like solvent, spray rate, pH of precursor, and so forth, have been used for this study. Variation in the deposition conditions has tremendous impact on the luminescence properties as well as resistivity. Two emissions could be recorded for all samples—the near band edge emission (NBE) at 380 nm and the deep level emission (DLE) at ~500 nm which are competing in nature. It is observed that the ratio of intensities of DLE to NBE (/) can be reduced by controlling oxygen incorporation in the sample. - measurements indicate that restricting oxygen incorporation reduces resistivity considerably. Variation of / and resistivity for samples prepared under different deposition conditions is similar in nature. / was always less than resistivity by an order for all samples. Thus from PL measurements alone, the order of resistivity of the samples can be estimated.http://dx.doi.org/10.1155/2013/105796 |
| spellingShingle | N. Poornima T. V. Vimalkumar V. G. Rajeshmon C. Sudha Kartha K. P. Vijayakumar Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique International Journal of Photoenergy |
| title | Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique |
| title_full | Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique |
| title_fullStr | Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique |
| title_full_unstemmed | Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique |
| title_short | Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique |
| title_sort | reliable and damage free estimation of resistivity of zno thin films for photovoltaic applications using photoluminescence technique |
| url | http://dx.doi.org/10.1155/2013/105796 |
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