Chloride Additives as Crystallinity Modulators in 2D Tin Halide Perovskite Transistors
Tin (Sn2+)‐based halide perovskites have emerged as promising lead‐free alternatives for high‐performance thin‐film transistors (TFTs) due to their low toxicity and excellent hole transport properties. However, difficult control over their rapid film crystallization hinders the device performance an...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-08-01
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| Series: | Small Structures |
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| Online Access: | https://doi.org/10.1002/sstr.202500055 |
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| author | Hyoungha Ryu Youjin Reo Wantae Park Donghyeon Lee Hamin Choi Soohwan Yoo Ao Liu Huihui Zhu Yong‐Young Noh |
| author_facet | Hyoungha Ryu Youjin Reo Wantae Park Donghyeon Lee Hamin Choi Soohwan Yoo Ao Liu Huihui Zhu Yong‐Young Noh |
| author_sort | Hyoungha Ryu |
| collection | DOAJ |
| description | Tin (Sn2+)‐based halide perovskites have emerged as promising lead‐free alternatives for high‐performance thin‐film transistors (TFTs) due to their low toxicity and excellent hole transport properties. However, difficult control over their rapid film crystallization hinders the device performance and yield. Herein, the incorporation of chloride additives, particularly methylammonium chloride (MACl), into phenethylammonium tin iodide (PEA2SnI4), effectively modulates the crystallization process by forming intermediate complexes within the precursor solution and the film, fabricating large crystallites with minimized defects. The enhanced film quality contributes to efficient charge transport in the channel layers of TFT, where optimized MACl‐PEA2SnI4 TFTs exhibit up to a threefold increase in field‐effect mobility and a substantial enhancement in the on/off current ratio. The chloride additive engineering can effectively address the fundamental issues of rapid crystallization in Sn2+‐based perovskites, providing deeper insights into efficient film quality modulation and charge transport efficiency for electronic applications. |
| format | Article |
| id | doaj-art-113c8e45a3d74ece80857cf74f5b749a |
| institution | Kabale University |
| issn | 2688-4062 |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Small Structures |
| spelling | doaj-art-113c8e45a3d74ece80857cf74f5b749a2025-08-20T03:44:58ZengWiley-VCHSmall Structures2688-40622025-08-0168n/an/a10.1002/sstr.202500055Chloride Additives as Crystallinity Modulators in 2D Tin Halide Perovskite TransistorsHyoungha Ryu0Youjin Reo1Wantae Park2Donghyeon Lee3Hamin Choi4Soohwan Yoo5Ao Liu6Huihui Zhu7Yong‐Young Noh8Department of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang Gyeongbuk 37673 KoreaDepartment of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang Gyeongbuk 37673 KoreaDepartment of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang Gyeongbuk 37673 KoreaDepartment of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang Gyeongbuk 37673 KoreaDepartment of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang Gyeongbuk 37673 KoreaDepartment of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang Gyeongbuk 37673 KoreaInstitute of Fundamental and Frontier Sciences State Key Laboratory of Electronic Thin Films and Integrated Devices Key Laboratory of Quantum Physics and Photonic Quantum Information of the Ministry of Education University of Electronic Science and Technology of China Chengdu 611731 ChinaSchool of Physics University of Electronic Science and Technology of China Chengdu 611731 ChinaDepartment of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang Gyeongbuk 37673 KoreaTin (Sn2+)‐based halide perovskites have emerged as promising lead‐free alternatives for high‐performance thin‐film transistors (TFTs) due to their low toxicity and excellent hole transport properties. However, difficult control over their rapid film crystallization hinders the device performance and yield. Herein, the incorporation of chloride additives, particularly methylammonium chloride (MACl), into phenethylammonium tin iodide (PEA2SnI4), effectively modulates the crystallization process by forming intermediate complexes within the precursor solution and the film, fabricating large crystallites with minimized defects. The enhanced film quality contributes to efficient charge transport in the channel layers of TFT, where optimized MACl‐PEA2SnI4 TFTs exhibit up to a threefold increase in field‐effect mobility and a substantial enhancement in the on/off current ratio. The chloride additive engineering can effectively address the fundamental issues of rapid crystallization in Sn2+‐based perovskites, providing deeper insights into efficient film quality modulation and charge transport efficiency for electronic applications.https://doi.org/10.1002/sstr.202500055additive engineeringcrystallizationsthin‐film transistorstin halide perovskites |
| spellingShingle | Hyoungha Ryu Youjin Reo Wantae Park Donghyeon Lee Hamin Choi Soohwan Yoo Ao Liu Huihui Zhu Yong‐Young Noh Chloride Additives as Crystallinity Modulators in 2D Tin Halide Perovskite Transistors Small Structures additive engineering crystallizations thin‐film transistors tin halide perovskites |
| title | Chloride Additives as Crystallinity Modulators in 2D Tin Halide Perovskite Transistors |
| title_full | Chloride Additives as Crystallinity Modulators in 2D Tin Halide Perovskite Transistors |
| title_fullStr | Chloride Additives as Crystallinity Modulators in 2D Tin Halide Perovskite Transistors |
| title_full_unstemmed | Chloride Additives as Crystallinity Modulators in 2D Tin Halide Perovskite Transistors |
| title_short | Chloride Additives as Crystallinity Modulators in 2D Tin Halide Perovskite Transistors |
| title_sort | chloride additives as crystallinity modulators in 2d tin halide perovskite transistors |
| topic | additive engineering crystallizations thin‐film transistors tin halide perovskites |
| url | https://doi.org/10.1002/sstr.202500055 |
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