Revealing the Role of Vapor Flux in Chemical Vapor Deposition Growth of Bi<sub>2</sub>O<sub>2</sub>Se for Photodetectors
Two-dimensional (2D) materials are regarded as key foundational materials for next-generation optoelectronic devices. As a promising new type of 2D layered semiconductor, Bi<sub>2</sub>O<sub>2</sub>Se has emerged as a strong candidate for high-performance opto-electronic devi...
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2025-04-01
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| author | Qin Huang Jiqing Nie Jian Li Meng Wang Changyuan Ding Haiyan Nan Xiaofeng Gu Zhengyang Cai |
| author_facet | Qin Huang Jiqing Nie Jian Li Meng Wang Changyuan Ding Haiyan Nan Xiaofeng Gu Zhengyang Cai |
| author_sort | Qin Huang |
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| description | Two-dimensional (2D) materials are regarded as key foundational materials for next-generation optoelectronic devices. As a promising new type of 2D layered semiconductor, Bi<sub>2</sub>O<sub>2</sub>Se has emerged as a strong candidate for high-performance opto-electronic devices due to its high carrier mobility, tunable bandgap, and excellent environmental stability. However, achieving precise control over Bi<sub>2</sub>O<sub>2</sub>Se growth to obtain high-quality Bi<sub>2</sub>O<sub>2</sub>Se remains a challenge in the field. In this study, we employed chemical vapor deposition (CVD) to grow thin-layer 2D Bi<sub>2</sub>O<sub>2</sub>Se flakes. We further used a transport model and thermodynamic Arrhenius fitting to analyze the relationship between vapor flux and the properties of the flakes. Density functional theory was used to study the electronic structure of the as-grown samples. The electrical and optoelectronic results demonstrate that Bi<sub>2</sub>O<sub>2</sub>Se-based FETs exhibit good performance in terms of mobility (129 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>), on/off ratio (4.51 × 10<sup>5</sup>), and photoresponsivity (94.98 AW<sup>−1</sup>). This work provides a new way to study the influence of vapor flux on the sizes and shapes of Bi<sub>2</sub>O<sub>2</sub>Se flakes for photodetectors. |
| format | Article |
| id | doaj-art-1133029b3da944b29b8de1ea28b882a9 |
| institution | OA Journals |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | MDPI AG |
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| series | Nanomaterials |
| spelling | doaj-art-1133029b3da944b29b8de1ea28b882a92025-08-20T02:28:25ZengMDPI AGNanomaterials2079-49912025-04-0115856710.3390/nano15080567Revealing the Role of Vapor Flux in Chemical Vapor Deposition Growth of Bi<sub>2</sub>O<sub>2</sub>Se for PhotodetectorsQin Huang0Jiqing Nie1Jian Li2Meng Wang3Changyuan Ding4Haiyan Nan5Xiaofeng Gu6Zhengyang Cai7School of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaSchool of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaSchool of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaSchool of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaSchool of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaSchool of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaSchool of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaSchool of Integrated Circuits, Jiangnan University, Wuxi 214122, ChinaTwo-dimensional (2D) materials are regarded as key foundational materials for next-generation optoelectronic devices. As a promising new type of 2D layered semiconductor, Bi<sub>2</sub>O<sub>2</sub>Se has emerged as a strong candidate for high-performance opto-electronic devices due to its high carrier mobility, tunable bandgap, and excellent environmental stability. However, achieving precise control over Bi<sub>2</sub>O<sub>2</sub>Se growth to obtain high-quality Bi<sub>2</sub>O<sub>2</sub>Se remains a challenge in the field. In this study, we employed chemical vapor deposition (CVD) to grow thin-layer 2D Bi<sub>2</sub>O<sub>2</sub>Se flakes. We further used a transport model and thermodynamic Arrhenius fitting to analyze the relationship between vapor flux and the properties of the flakes. Density functional theory was used to study the electronic structure of the as-grown samples. The electrical and optoelectronic results demonstrate that Bi<sub>2</sub>O<sub>2</sub>Se-based FETs exhibit good performance in terms of mobility (129 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>), on/off ratio (4.51 × 10<sup>5</sup>), and photoresponsivity (94.98 AW<sup>−1</sup>). This work provides a new way to study the influence of vapor flux on the sizes and shapes of Bi<sub>2</sub>O<sub>2</sub>Se flakes for photodetectors.https://www.mdpi.com/2079-4991/15/8/567two-dimensional materialschemical vapor depositionBi<sub>2</sub>O<sub>2</sub>Sevapor reactionphotodetectorsdensity functional theory |
| spellingShingle | Qin Huang Jiqing Nie Jian Li Meng Wang Changyuan Ding Haiyan Nan Xiaofeng Gu Zhengyang Cai Revealing the Role of Vapor Flux in Chemical Vapor Deposition Growth of Bi<sub>2</sub>O<sub>2</sub>Se for Photodetectors Nanomaterials two-dimensional materials chemical vapor deposition Bi<sub>2</sub>O<sub>2</sub>Se vapor reaction photodetectors density functional theory |
| title | Revealing the Role of Vapor Flux in Chemical Vapor Deposition Growth of Bi<sub>2</sub>O<sub>2</sub>Se for Photodetectors |
| title_full | Revealing the Role of Vapor Flux in Chemical Vapor Deposition Growth of Bi<sub>2</sub>O<sub>2</sub>Se for Photodetectors |
| title_fullStr | Revealing the Role of Vapor Flux in Chemical Vapor Deposition Growth of Bi<sub>2</sub>O<sub>2</sub>Se for Photodetectors |
| title_full_unstemmed | Revealing the Role of Vapor Flux in Chemical Vapor Deposition Growth of Bi<sub>2</sub>O<sub>2</sub>Se for Photodetectors |
| title_short | Revealing the Role of Vapor Flux in Chemical Vapor Deposition Growth of Bi<sub>2</sub>O<sub>2</sub>Se for Photodetectors |
| title_sort | revealing the role of vapor flux in chemical vapor deposition growth of bi sub 2 sub o sub 2 sub se for photodetectors |
| topic | two-dimensional materials chemical vapor deposition Bi<sub>2</sub>O<sub>2</sub>Se vapor reaction photodetectors density functional theory |
| url | https://www.mdpi.com/2079-4991/15/8/567 |
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